LHF08CH3 Datasheet, PDF (20/49 Pages) Sharp Electrionic Components – Flash Memory 8M (1M ×8)

SHARI=
Data and Address
LHFOSCH3
Suspend Byte
Command
Comments
Data40H
write
Setup Byte Wnte
Addr=Location to Be Written
Data=Data to Be Written
write
Byte Wnte
Ackfr=Locabon to Be Written
Read
Status Register Data
Standby
Check SR.7
l=WSM Ready
O=WSM Busy
Repeat for subsequent byte writes.
SR full stat”s check can be done after each byte write, or after a sequence of
byte writes.
Write FFH after the last byte write operahon to place device I”
read array mode.
FULL STATUS CHECK PROCEDURE
Read Status Aeglster
Data(See Above)
Deuce Protect Error
Byte Write Successful
BUS
Operation
Standby
Command
Comments
Check SR.3
l=Vpp Error Detect
Standby
Check SR. 1
l=Devlce Protect Detect
RP#=V,,+Block Lock-Bit 1s Set
Only requtred for systems
implemenbng lock-bit configuration
Standby
Check SR.4
t=Data Wnte Error
SR.4SR.3 and SIX, are only cleared by the Clear Status Register
command in cases where multiple locations are written before
full status is checked.
If error is detected, clear the Status Regtster before attempting
retry or other error recovery.
Figure 6. Automated Byte Write Flowchart
Rev. 1.0