PD49PI Datasheet, PDF (2/3 Pages) Sharp Electrionic Components – High Speed, High Sensitivity Photodiode

Fig .1 Power Dissipation vs.
Ambient Temperature
200
150
100
50
0
- 25
0
25
50
75 85 100
Ambient temperature T _a ( ˚C)
Fig. 3 Dark Current vs.
Ambient Temperature
10^{- 6}
V_R = 10V
10^{- 7}
10^{- 8}
10^{- 9}
10 ^{- 10}
10 ^{- 11}
10 ^{- 12}
- 25
0
25
50
75
100
Ambient temperature Ta (˚C)
Fig. 5 Terminal Capacitance vs.
Reverse Voltage
60
f = 1MHz
T_a= 25˚C
50
40
30
20
10
0
0.05 0.1 0.2 0.5 1 2
5 10 20 50
Reverse voltage V_R (V)
PD49PI/PD481PI
Fig. 2 Spectral Sensitivity
100
T _a = 25˚C
90
80
PD481Pl
70
PD49Pl
60
50
40
30
20
10
0
600 700
800 900 1000 1100 1200
Wavelength λ ( nm )
Fig. 4 Dark Current vs. Reverse Voltage
10^-7
5
T_a = 25˚C
2
10^-8
5
2
10^-9
5
2
10 ^-10
5
2
10 ^-11
5 ₁₀- 2 2 5 ₁₀-1 2 5 1 2 5 ₁₀ 2 5
Reverse voltage V_R (V)
Fig. 6 Relative Output vs. Ambient Temperature
(Emitter : GL537/GL538,Detector : PD49PI/PD481PI )
160
( Test circuit )
GL537
PD49Pl
140
GL538
PD481Pl
120
A
100
80
60
40
Distance between infrared light emitting
20
diode and photodiode shall be fixed I _sc
0
= 100 µ A at I _F= 20mA and T_a= 25˚C
- 25
0
25
50
75
100
Ambient temperature T_a (˚C)