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| PD410PI2E00F Datasheet, PDF (2/4 Pages) Sharp Electrionic Components – High Speed Photodiode | |||
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Fig. 1 Power Dissipation vs.
Ambient Temperature
200
150
100
50
0
- 25
0
25
50
75 85 100
Ambient temperature Ta ( ËC)
Fig. 3 Dark Current vs.
Ambient Temperature
10- 6
VR = 10V
10- 7
10- 8
10- 9
10 - 10
10 - 11
10 - 12
- 25
0
25
50
75
100
Ambient temperature Ta (ËC)
Fig. 5 Terminal Capacitance vs.
Reverse Voltage
60
f = 1MHz
T a = 25ËC
50
40
30
20
10
0
0.05 0.1 0.2 0.5 1 2
5 10 20 50
Reverse voltage VR (V)
PD410PI
Fig. 2 Spectral Sensitivity
100
Ta = 25ËC
90
80
70
60
50
40
30
20
10
0
600 700 800 900 1000
Wavelength λ ( nm )
1100 1200
Fig. 4 Dark Current vs. Reverse Voltage
10 -7
5
2
10 -8
Ta = 25ËC
5
2
10 -9
5
2
10 -10
5
2
10 -11
5 10- 2 2 5 10- 1 2 5 1 2 5 10 2 5
Reverse voltage VR (V)
Fig. 6 Relative Output vs. Ambient Temperature
( Emitter : GL537 /GL538)
Detector : PD410PI)
160
( Test circuit )
GL537
140
GL538
PD410Pl
120
A
100
80
60
40
Distance between infrared light
20
emitting diode and photodiode
shall be fixed when I SC = 100µ A at I F
0
= 20mA and T a= 25ËC.
- 25
0
25
50
75
100
Ambient temperature Ta (ËC)
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