LT0H34P Datasheet, PDF (2/3 Pages) Sharp Electrionic Components – Hologram Laser(3 beam) for MD players/recorders

LT0H34P
TEC940525
s Electro-optical Characteristics
Laser
Monitor
Photodiode
Photodiode
for signal
detection
Parameter
Symbol
Condition
Threshold current
Ith
-
Operating current
Iop
Operating voltage Vop
Wavelength *2
λp
PH=27.4mW *1
Monitor current
Radiation
Characteristics
Angle
Parallel
Perpen-
dicular
Emission
Point
accuracy
Angle
Positon
Im
θ//
θ⊥
∆φ //
∆φ ⊥
∆x
∆y
∆z
PH=27.4mW *1,VR=5V
PH=27.4mW *1
-
Differentioal efficiency ^η
18.3mW
Iop(27.4mW) - Iop(9.1mW)
Dark current
Id
Terminal capacitance Ct
VR=5V
A
Reverse voltage
VR
IR=10µA
B
C
A
Dark current
Id
VR=1.5V
B
C
A
Terminal capacitance Ct _{VR=1.5V,f=1MHz} B
C
A
Short circuit current *3 *4 Isc
Ev=1000Lx B
C
Response time *5
A
tr,tf ^{VR=1.5V, RL=180Ω B}
C
MIN
-
-
-
770
-
-
-
-
-
-
-
-
0.25
-
-
15
-
1.0
0.6
120
40
60
-
-
(Tc=25˚C)
TYP MAX
60
80
125 150
1.8 2.2
785 800
Units
mA
mA
V
nm
0.14
-
mA
11
-
˚
26
-
˚
-
±1
˚
-
±3
˚
- ±30 µm
- ±30 µm
- ±80 µm
0.5 0.85 mW/mA
-
150 nA
20
-
pF
-
-
V
-
10 nA
-
8
-
6
pF
210
-
80
-
nA
115
-
-
660
-
660
ns
*1 Output power form LD chip
*2 Oscillation mode: TEM00
*7
Applicabledivisions
correspond to pattern segment No.
*3 Values in each element. Elements other than subject elemens shall be
measured while the anode and the cathode are short-sircuited to each other
D1
D2
*4 Short-circuit currents between segments D1 and D5 or D3 and D4 shall be
D3
D4
within ±10% of the average
D5
*5 Ev:Illuminance by CIE standard light source A(tungsten lamp)
*6 Measuring method is shown below.
Segment No.
D1,D5 ••••••• A
D2,D3 ••••••• B
D4 ••••••••••• C
Laser diode
λ=780nm
Input
Output
RL =180Ω
Input
VR=1.5V
Output
50%
Fig.1
95%
5%
tr
tf