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LT0H33P Datasheet, PDF (2/3 Pages) Sharp Electrionic Components – Hologram Laser(3 beam) for MD players
LT0H33P
TEC940525
s Electro-optical Characteristics
Laser
(without
hologram
glass)
Parameter
Symbol
Threshold current
Ith
Operating current
Iop
Operating voltage
Vop
Wavelength *2
λp
Monitor current
Im
Radiation
Characteristics Angle
Parallel
Perpen-
dicular
θ//
θ⊥
∆φ //
Emission
Point
accuracy
Angle ∆φ ⊥
∆x
Positon ∆y
∆z
Differentioal efficiency η
Condition
-
Po = 6mW *1
Po =6mW *1,VR=15V
Po = 6mW *1
-
18.3mW
Iop(6mW)-Iop(6mW)
Monitor
Photodiode
Photodiode
for signal
detection
Sensitivity
S
Dark current
Id
Terminal capacitance Ct
Reverse voltage
VR
Dark current
Id
Terminal capacitance Ct
Short circuit current*3 *4 Isc
Response time *5
tr,tf
VR=1.5V
A
IR=10µA
B
C
A
VR=1.5V
B
C
A
VR=1.5V,f=1MHz B
C
A
Ev=1000Lx
B
C
A
VR=1.5V, RL=180Ω B
C
MIN
-
-
-
770
0.15
8.5
29
-
-
-
-
-
0.15
-
-
-
15
-
1
0.6
120
40
60
-
-
TYP
45
63
-
780
0.5
11
38
-
-
-
-
-
0.3
0.08
-
20
-
-
-
-
210
80
115
-
-
(Tc=25˚C)
MAX Units
60 mA
85 mA
2.0
V
800 nm
1
mA
13
˚
43
˚
±1
˚
±3
˚
±20 µm
±20 µm
±80 µm
0.6 mW/mA
- mA/mW
150 nA
-
pF
-
V
10 nA
8
pF
6
-
-
nA
-
660
660
ns
*1 Output power form LD chip
*2 Oscillation mode, transverse single mode
*6
Applicabledivisions
*3 Values in each element. Elements other than subject elemens shall be
measured while the anode and the cathode are short-sircuited to each other
*4 Short-circuit currents between segments D1 and D5 or D3 and D4 shall be
within ±10% of the average
correspond to pattern segment No.
D1
D2
D4
D3
*5 Measuring method is shown below.
D5
Laser diode
λ=780nm
Input
Output
RL =180Ω
Input
VR=15V
Output
50%
90%
10%
Segment No.
D1,D5 ••••••• A
D2,D3 ••••••• B
D4 ••••••••••• C
Fig.1
tr
tf