LT0H12M Datasheet, PDF (2/3 Pages) Sharp Electrionic Components – Hologram Laser(1 beam) for Magneto-Optical disk

LT0H12M
TEC N 940525
s Electro-optical Characteristics
Laser
(without
hologram
glass)
Monitor
Photodiode
Photodiode
for signal
detection
Parameter
Symbol
Condition
Threshold current Ith
-
Operating current Iop
Operating voltage Vop
Po =30mW *1
Wavelength *2
λp
Monitor current
Im
Radiation ^{Angle Parallel θ//}
Characteristics ^*3
Perpen-
dicular
θ⊥
Ripple
Emission
Point
∆φ //
Angle _{∆φ ⊥}
accuracy _{Positon ∆X,Y,Z}
Po =30mW *1 ,VR=15V
PO =30mW *1
-
Differentioal efficiency ^η
20mW
Iop(30mW) - Iop(10mW)
Sensitivity
S
Dark current
ID
VR=15V
Terminal capacitance Ct
Reverse voltage VR
IR=10µA
A,B
Dark current
Id
VR=15V
A,B
A
Terminal capacitance ^Ct
VR=15V,f=1MHZ
B
Short circuit current *4 Isc
Ev=1000Lx *5
A
B
Response time *6 tr,tf VR=15V,RL=180Ω A,B
MIN
-
-
-
770
0.1
8
20.
-20
-2
-3
-80
0.3
-
-
-
15
-
0.6
0.8
85
260
-
(Tc=25˚C)
TYP MAX
60
80
115 150
1.85 2.2
780 795
0.3
2
9.5 13
26
32
-
20
-
2
-
3
-
80
Units
mA
mA
V
nm
mA
˚
˚
%
˚
˚
µm
0.55 0.8 mW/mA
10
- µA/mW
-
150 nA
8
-
pF
-
-
V
-
20 nA
2.8
5
pF
3
5.4
170 270 _nA
460 670
10 140 ns
*1 Output power form LD chip
*2 Oscillation mode, transverse single mode
*3 An angle for 50% of the peak intensity (full angle at half maximum).
*4 Values in each element. Elements other than subject elements shall be measured
while the anode and the cathode are short-circuited to each other
*5 Illumination intensity by CIE standard light (Tungsten lamp)
*6 Measuring method is shown below
Laser diode
λ=780nm
Input
Output
RL=180Ω
VR=15V
Input
Output
tr
*7
Applicabledivisions correspond to pattern segment No.
D1 D2 D3 D4
Segment No.
D2,D3 ••••••• A
D1,D4 ••••••• B
50%
90%
10%
tf