LH28F800SG Datasheet, PDF (18/42 Pages) Sharp Electrionic Components – 8 M-bit (512 kB x 16) SmartVoltage Flash Memory

LH28F800SG-L (FOR SOP)
Start
Write 40H,
Address
Write Word
Data and Address
Read
Status Register
0
SR.7 =
1
BUS
OPERATION ^COMMAND
COMMENTS
Write
Setup Data = 40H
Word Write Addr = Location to be Written
Write
Word Write
Data = Data to be Written
Addr = Location to be Written
Read
Status Register Data
Suspend Word
No
Write Loop
Suspend Yes
Word Write
Standby
Check SR.7
1 = WSM Ready
0 = WSM Busy
Repeat for subsequent word writes.
SR full status check can be done after each word write or after
a sequence of word writes.
Write FFH after the last word write operation to place device
in read array mode.
Full Status
Check if Desired
Word Write
Complete
FULL STATUS CHECK PROCEDURE
Read Status Register
Data (See Above)
1
SR.3 =
0
VPP Range Error
SR.1 = ¹
0
Device Protect Error
1
SR.4 =
0
Word Write
Successful
Word Write Error
BUS
OPERATION ^COMMAND
COMMENTS
Standby
Check SR.3
1 = VPP Error Detect
Standby
Check SR.1
1 = Device Protect Detect
RP# = VIH, Block Lock-Bit is Set
Only required for systems
implementing lock-bit configuration
Standby
Check SR.4
1 = Data Write Error
SR.4, SR.3 and SR.1 are only cleared by the Clear Status
Register command in cases where multiple locations are
written before full status is checked.
If error is detected, clear the status register before attempting
retry or other error recovery.
Fig. 4 Automated Word Write Flowchart
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