LT1W92A Datasheet, PDF (1/1 Pages) Sharp Electrionic Components – 3030 Size, 1.1mm Thickness, MID* Type Full Color Leadless Chip LED Device

Full Color Leadless Chip LED Device
LT1W92A
LT1W92A(Under Development)
3030 Size, 1.1mm Thickness, MID*
Type Full Color Leadless Chip
LED Device
s Outline Dimensions
3.0
2.6
4
3
Colorless transparency
(Unit : mm)
1.1
s Radiation Diagram
(Ta=25˚C)
-20˚
0˚
-40˚
100
Red
80
+20˚
+40˚
Yellow-green
Black print
1
2
0.7
-60˚
Recommended PWB pattern for soldering
0.5
0.5
1.2
1.2
-80˚
Soldering area
60
40
+60˚
20
+80˚
Device center
[Anode]
[Cathode]
0.4
X
(0.9)
1.2
(0.9)
Black print
1.Plating area
Resist
2.Pin connections
43
1 Anode(Blue)
2 Anode(Yellow-green)
3 Cathode
4 Anode(Red)
12
3.Unspecified tolerance:±0.2
*MID:Molded Interconnection Device
-20˚
0˚
+20˚
-40˚
100
+40˚
80
Blue
60
-60˚
+60˚
40
20
-80˚
+80˚
X
s Absolute Maximum Ratings
Model No. Radiation color Radiation material
Power dissipation Forward current Peak forward current
P^*1
IF
IFM*2
(mW) (mA)
(mA)
Derating factor _{Reverse voltage}
(mA/˚C)
VR
DC Pulse
(V)
(
)
Operating temperature Storage temperature Soldering temperature
Topr
Tstg
Tsol*3
(˚C)
(˚C)
(˚C)
Blue
GaN on SiC
200
30
LT1W92A Yellow-green GaP
84
30
Red
GaAsP on GaP
84
30
100
0.67 1.33
5
50
0.40 0.67
5
50
0.40 0.67
5
-30 to +85 -40 to +100 260
-30 to +85 -40 to +100 260
-30 to +85 -40 to +100 260
*1 The value is specified under the condition that either color is lightened separately.
When all diodes are lightened simultaneously, the power dissipation of each diode should be less than 30% of the value specified in this table.
*2 Duty ratio=1/10, Pulse width=0.1ms
*3 For 3s or less at the temperature of hand soldering. Temperature of reflow soldering is shown on the below page.
s Electro-optical Characteristics
Lens
type
Model
No.
Radiation
color
Colorless
transparency
LT1W92A
Blue
Yellow-green
Red
Forward voltage
VF(V)
TYP MAX
4.4
5.6
2.1
2.8
2.0
2.8
Peak emission wavelength
λp(nm)
IF
TYP (mA)
430
20
565
20
635
20
Luminous intensity
IV(mcd) IF
TYP (mA)
8.1
20
32.0
20
16.0
20
Spectrum radiation bandwidth
∆λ(nm) IF
TYP (mA)
70
20
30
20
35
20
Reverse current
IR(µA) VR
MAX (V)
10
4
10
4
10
4
(Ta=25˚C)
Terminal capacitance Page for
Ct(pF)
characteristics
TYP ^(MHZ) diagrams
50
1
----
35
1
----
20
1
----
10 (Notice) ¡In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP
devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.
(Internet) ¡Data for sharp's optoelectronic/power device is provided for internet.(Address http://www.sharp.co.jp/ecg/)