LT1ET82A Datasheet, PDF (1/4 Pages) Sharp Electrionic Components – 3.3X2.9mm, 1.1mm Thickness, High-luminosity, Dichromatic Chip LED Devices with Lens

Dichromatic Chip LED Device
LT1tt82A series
LT1tt82A series
s Outline Dimensions
(Unit : mm)
3.3!2.9mm, 1.1mm Thickness,
High-luminosity, Dichromatic
Chip LED Devices with Lens
s Radiation Diagram
(Ta=25˚C)
Colorless transparency
3.3
4
3
1
2
4-R0.2
(R0.5)
0.9
1.5 0.9 ^(R0.2)
-40˚
E.K
-50˚
-60˚
-70˚
-80˚
-90˚
-30˚
-20˚ -10˚
0˚ 100 +10˚ +20˚
+30˚
80
60
40
20
0
+40˚
T.S
+50˚
+60˚
+70˚
+80˚
+90˚
(0.3)
(0.3) (0.3)
Pin connections
series
Pin
ET
1 Anode Red
2 Cathode (HL)
3
4
Cathode
Anode
Yellow-green
KS
Sunset
orange
Green
(0.3)
Unspecified tolerance:±0.2
s Absolute Maximum Ratings*
(Ta=25˚C)
Model No. Radiation color Radiation material
LT1ET82A
Yellow-green
Red(High-luminosity)
GaP
GaAIAs on GaAs
LT1KS82A
Green
Sunset orange
GaP
GaAsP on GaP
Power dissipation Forward current Peak forward current
P
IF
IFM*1
(mW) (mA)
(mA)
50
20
50
66
30
50
50
20
50
85
30
50
Derating factor _{Reverse voltage}
(mA/˚C)
VR
DC Pulse
(V)
0.27 0.67
5
0.40 0.67
5
0.27 0.67
5
0.40 0.67
5
Operating temperature Storage temperature Soldering temperature
Topr
Tstg
Tsol*2
(˚C)
(˚C)
(˚C)
-25 to +85 -25 to +100 350
-25 to +85 -25 to +100 350
-25 to +85 -25 to +100 350
-25 to +85 -25 to +100 350
* The value is specified under the condition that either color is lightened separately. When the both diodes are lightened simultaneously,
the power dissipation of each diode should be less than the half of the value specified in this table.
*1 Duty ratio=1/10, Pulse width=0.1ms
*2 For 3s or less at the temperature of hand soldering. Temperature of reflow soldering is shown on the below page.
s Electro-optical Characteristics
Lens
type
Model No.
Radiation
color
Yellow-green
Colorless ^LT1ET82A Red(High-luminosity)
transparency
Green
LT1KS82A _{Sunset orange}
Forward voltage
VF(V)
TYP MAX
1.95 2.5
1.75 2.2
1.95 2.5
2.0
2.8
Peak emission wavelength
λp(nm)
IF
TYP (mA)
565
10
660
20
555
10
610
20
Luminous intensity
IV(mcd) IF
TYP (mA)
7.0
10
11.8
20
2.4
10
10.5
20
Spectrum radiation bandwidth
∆λ(nm) IF
TYP (mA)
30
10
20
20
25
10
35
20
Reverse current
IR(µA) VR
MAX (V)
10
4
10
4
10
4
10
4
(Ta=25˚C)
Terminal capacitance Page for
Ct(pF)
characteristics
TYP ^(MHZ) diagrams
35
1
→
30
1
→
40
1
→
15
1
→
10 (Notice) ¡In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP
devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.
(Internet) ¡Data for sharp's optoelectronic/power device is provided for internet.(Address http://www.sharp.co.jp/ecg/)