English
Language : 

LH532100B Datasheet, PDF (1/8 Pages) Sharp Electrionic Components – CMOS 2M (256K x 8) MROM
LH532100B
FEATURES
• 262,144 words × 8 bit organization
• Access time: 150 ns (MAX.)
• Low-power consumption:
Operating: 275 mW (MAX.)
Standby: 550 µW (MAX.)
• Static operation
• Mask-programmable OE/OE and
OE1/OE1/DC
• TTL compatible I/O
• Three-state outputs
• Single +5 V power supply
• Packages:
32-pin, 600-mil DIP
32-pin, 525-mil SOP
32-pin, 450-mil QFJ (PLCC)
32-pin, 8 × 20 mm2 TSOP (Type I)
32-pin, 400-mil TSOP (Type II)
• JEDEC standard EPROM pinout (DIP)
CMOS 2M (256K × 8) MROM
DESCRIPTION
The LH532100B is a 2M-bit mask-programmable
ROM organized as 262,144 × 8 bits. It is fabricated
using silicon-gate CMOS process technology.
PIN CONNECTIONS
32-PIN DIP
32-PIN SOP
TOP VIEW
OE1/OE1/DC 1
A16 2
A15 3
A12 4
A7 5
A6 6
A5 7
A4 8
A3 9
A2 10
A1 11
A0 12
D0 13
D1 14
D2 15
GND 16
32 VCC
31 DC
30 A17
29 A14
28 A13
27 A8
26 A9
25 A11
24 OE/OE
23 A10
22 CE
21 D7
20 D6
19 D5
18 D4
17 D3
532100B-1
Figure 1. Pin Connections for DIP and
SOP Packages
32-PIN QFJ
TOP VIEW
D7
CE
A10
OE/OE
A11
A9
A8
A13
A14
20 19 18 17 16 15 14
21
13 D0
22
12 A0
23
11 A1
24
10 A2
25
9 A3
26
8 A4
27
7 A5
28
6 A6
29
5 A7
30 31 32 1 2 3 4
532100B-7
Figure 2. Pin Connections QFJ
(PLCC) Package
1