LH5316P00B Datasheet, PDF (1/6 Pages) Sharp Electrionic Components – CMOS 16M (2M x 8/1M x 16) MROM

LH5316P00B
CMOS 16M (2M × 8/1M × 16) MROM
FEATURES
• 2,097,152 × 8 bit organization
(Byte mode: BYTE = V_IL)
1,048,576 × 16 bit organization
(Word mode: BYTE = V_IH)
• Access time: 120 ns (MAX.)
• Supply current:
– Operating: 70 mA (MAX.)
– Standby: 100 µA (MAX.)
• TTL compatible I/O
• Three-state output
• Single +5 V power supply
• Static operation
• Package:
44-pin, 600-mil SOP
• Item related with COCOM regulation:
– Non programmable
– Not designed or rated as radiation
hardened
– CMOS process (P type silicon
substrate)
DESCRIPTION
The LH5316P00B is a 16M-bit mask-programmable
ROM organized as 2,097,152 × 8 bits (Byte mode) or
1,048,576 × 16 bits (Word mode) that can be selected
by a BYTE input pin. It is fabricated using silicon-gate
CMOS process technology.
PIN CONNECTIONS
44-PIN SOP
TOP VIEW
NC 1
A₁₈ 2
A₁₇ 3
A₇ 4
A₆ 5
A₅ 6
A₄ 7
A₃ 8
A₂ 9
A₁ 10
A₀ 11
CE 12
GND 13
OE 14
D₀ 15
D₈ 16
D₁ 17
D₉ 18
D₂ 19
D₁₀ 20
D₃ 21
D₁₁ 22
44 NC
43 A₁₉
42 A₈
41 A₉
40 A₁₀
39 A₁₁
38 A₁₂
37 A₁₃
36 A₁₄
35 A₁₅
34 A₁₆
33 BYTE
32 GND
31 D₁₅/A_-1 (NOTE)
30 D₇
29 D₁₄
28 D₆
27 D₁₃
26 D₅
25 D₁₂
24 D₄
23 V_CC
NOTE: The D₁₅/A_-1 pin becomes LSB address input (A_-1)
when the BYTE pin is set to be LOW in byte mode and
data output (D₁₅) when set to be HIGH in word mode.
The input state of BYTE pin can not be changed during
operation. The BYTE pin must be set to either GND or V_CC.
5316P00B-1
Figure 1. Pin Connections
1