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LH531000B Datasheet, PDF (1/6 Pages) Sharp Electrionic Components – CMOS 1M (128K x 8) MROM
LH531000B
FEATURES
• 131,072 words × 8 bit organization
• Access time: 150 ns (MAX.)
• Low power consumption:
Operating: 192.5 mW (MAX.)
Standby: 550 µW (MAX.)
• Programmable CE/OE/OE
• Static operation
• TTL compatible I/O
• Three-state outputs
• Single +5 V power supply
• Packages:
28-pin, 600-mil DIP
28-pin, 450-mil SOP
• Mask ROM specific pinout
CMOS 1M (128K × 8) MROM
DESCRIPTION
The LH531000B is a mask-programmable ROM
organized as 131,072 × 8 bits. It is fabricated using
silicon-gate CMOS process technology.
PIN CONNECTIONS
28-PIN DIP
28-PIN SOP
TOP VIEW
A15
1
A12 2
A7 3
A6 4
A5 5
A4 6
A3 7
A2 8
A1 9
A0 10
D0 11
D1 12
D2 13
GND 14
28 VCC
27 A14
26 A13
25 A8
24 A9
23 A11
22 A16
21 A10
20 CE /OE/OE
19 D7
18 D6
17 D5
16 D4
15 D3
531000B-1
Figure 1. Pin Connections for DIP and
SOP Packages
1