LH531000B-S Datasheet, PDF (1/5 Pages) Sharp Electrionic Components – CMOS 1M (128K x 8) 3 V-Drive MROM

LH531000B-S
FEATURES
• 131,072 words × 8 bit organization
• Access time: 500 ns (MAX.)
• Power consumption:
Operating: 64.8 mW (MAX.)
Standby: 108 µW (MAX.)
• Mask-programmable control pin:
Pin 20 = CE/OE/OE
• Static operation
• Three-state outputs
• Low power supply: 2.6 V to 3.6 V
• Package: 28-pin, 450-mil SOP
CMOS 1M (128K × 8) 3 V-Drive MROM
DESCRIPTION
The LH531000B-S is a mask-programmable ROM
organized as 131,072 × 8 bits. It is fabricated using
silicon-gate CMOS process technology.
PIN CONNECTIONS
28-PIN SOP
TOP VIEW
A₁₅ 1
A₁₂ 2
A₇ 3
A₆ 4
A₅ 5
A₄ 6
A₃ 7
A₂ 8
A₁ 9
A₀ 10
D₀ 11
D₁ 12
D₂ 13
GND 14
28 V_CC
27 A₁₄
26 A₁₃
25 A₈
24 A₉
23 A₁₁
22 A₁₆
21 A₁₀
20 CE/OE/OE
19 D₇
18 D₆
17 D₅
16 D₄
15 D₃
531000BS-1
Figure 1. Pin Connections for DIP Package
1