 English |
|
|
|
|
|
|
|
| LH52D1000 Datasheet, PDF (1/12 Pages) Sharp Electrionic Components – CMOS 1M (128K x 8) Static Ram | |||
| |||
|
LH52D1000
CMOS 1M (128K Ã 8) Static Ram
FEATURES
⢠Access time: 85 ns (MAX.),
100 ns (MAX.)
⢠Current consumption:
Operating: 40 mA (MAX.)
6 mA (MAX.) (tRC, tWC = 1 µs)
Standby: 45 µA (MAX.)
⢠Data Retention:
1.0 µA (MAX. VCCDR = 3 V, tA = 25°C)
⢠Single power supply: 2.7 V to 3.6 V
⢠Operating temperature: -40°C to +85°C
⢠Fully-static operation
⢠Three-state output
⢠Not designed or rated as radiation
hardened
⢠Packages:
32-pin 8 Ã 20 mm2 TSOP
32-pin 8 Ã 13.4 mm2 STSOP
⢠N-type bulk silicon
DESCRIPTION
The LH52D1000 is a static RAM organized as
131,072 Ã 8 bits which provides low-power standby
mode. It is fabricated using silicon-gate CMOS process
technology.
PIN CONNECTIONS
32-PIN TSOP
32-PIN STSOP
A11 1
A9 2
A8 3
A13 4
WE 5
CE2 6
A15 7
VCC 8
NC 9
A16 10
A14 11
A12 12
A7 13
A6 14
A5 15
A4 16
TOP VIEW
32 OE
31 A10
30 CE1
29 I/O8
28 I/O7
27 I/O6
26 I/O5
25 I/O4
24 GND
23 I/O3
22 I/O2
21 I/O1
20 A0
19 A1
18 A2
17 A3
52D1000S-1
Figure 1. Pin Connections for TSOP
and STSOP Packages
1
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese