LH51BV1000J Datasheet, PDF (1/11 Pages) Sharp Electrionic Components – CMOS 1M (128K x 8) Static Ram

LH51BV1000J
CMOS 1M (128K × 8) Static Ram
FEATURES
• Access time: 70 ns (MAX.)
• Current consumption:
Operating: 30 mA (MAX.)
5 mA (MAX.) (t_RC, t_WC = 1 µs)
Standby: 60 µA (MAX.)
• Data Retention:
1.0 µA (MAX.) (V_CCDR = 3 V, T_A = 25°C)
• Single power supply: 2.7 V to 3.6 V
• Operating temperature: -25°C to +85°C
• Fully-static operation
• Three-state output
• Not designed or rated as radiation
hardened
• Package: 32-pin 6 × 10 mm CSP
• N-type bulk silicon
DESCRIPTION
The LH51BV1000JY is a static RAM organized as
131,072 × 8 bits which provides low power standby
mode. It is fabricated using silicon-gate CMOS process
technology.
PIN CONNECTIONS
1 23 4567 8
A
A₂ A₃ A₁
NC A₄ A₅
B
I/O₁ A₀ I/O₂
A₁₂ A₆ A₇
C
GND I/O₃
A₁₄ A₁₆
D
I/O₄ I/O₅
A₁₅ V_CC
E
I/O₇ I/O₈ I/O₆
CE₂ A_{13 WE}
F
A₁₀ OE CE₁
A₈ A₁₁ A₉
51BV1000-1
Figure 1. Pin Connections for CSP Package
1