LH28F800BG Datasheet, PDF (1/40 Pages) Sharp Electrionic Components – 8 M-bit (512 kB x 16) SmartVoltage Flash Memory

LH28F800BG-L (FOR SOP)
LH28F800BG-L
(FOR SOP)
DESCRIPTION
The LH28F800BG-L flash memory with Smart
Voltage technology is a high-density, low-cost,
nonvolatile, read/write storage solution for a wide
range of applications. The LH28F800BG-L can
operate at VCC = 2.7 V and VPP = 2.7 V. Its low
voltage operation capability realizes longer battery
life and suits for cellular phone application. Its boot,
parameter and main-blocked architecture, flexible
voltage and enhanced cycling capability provide for
highly flexible component suitable for portable
terminals and personal computers. Its enhanced
suspend capabilities provide for an ideal solution for
code + data storage applications. For secure code
storage applications, such as networking, where
code is either directly executed out of flash or
downloaded to DRAM, the LH28F800BG-L offers
two levels of protection : absolute protection with
VPP at GND, selective hardware boot block locking.
These alternatives give designers ultimate control of
their code security needs.
FEATURES
• SmartVoltage technology
– 2.7 V, 3.3 V or 5 V VCC
– 2.7 V, 3.3 V, 5 V or 12 V VPP
• High performance read access time
LH28F800BG-L85
– 85 ns (5.0±0.25 V)/90 ns (5.0±0.5 V)/
100 ns (3.3±0.3 V)/120 ns (2.7 to 3.6 V)
LH28F800BG-L12
– 120 ns (5.0±0.5 V)/130 ns (3.3±0.3 V)/
150 ns (2.7 to 3.6 V)
• Enhanced automated suspend options
– Word write suspend to read
– Block erase suspend to word write
– Block erase suspend to read
8 M-bit (512 kB x 16) SmartVoltage
Flash Memory
• Enhanced data protection features
– Absolute protection with VPP = GND
– Block erase/word write lockout during power
transitions
– Boot blocks protection except RP# = VHH
• SRAM-compatible write interface
• Optimized array blocking architecture
– Two 4 k-word boot blocks
– Six 4 k-word parameter blocks
– Fifteen 32 k-word main blocks
– Top or bottom boot location
• Enhanced cycling capability
– 100 000 block erase cycles
• Low power management
– Deep power-down mode
– Automatic power saving mode decreases ICC
in static mode
• Automated word write and block erase
– Command user interface
– Status register
• ETOX^TM∗ V nonvolatile flash technology
• Package
– 44-pin SOP (SOP044-P-0600)
∗ ETOX is a trademark of Intel Corporation.
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books,
etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.
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