LH28F800BG-L Datasheet, PDF (1/43 Pages) Sharp Electrionic Components – 8 M-bit (512 kB x 16) SmartVoltage Flash Memories

LH28F800BG-L/BGH-L (FOR TSOP, CSP)
LH28F800BG-L/BGH-L 8 M-bit (512 kB x 16) SmartVoltage
Flash Memories
(FOR TSOP, CSP)
DESCRIPTION
The LH28F800BG-L/BGH-L flash memories with
SmartVoltage technology are high-density, low-cost,
nonvolatile, read/write storage solution for a wide
range of applications. The LH28F800BG-L/BGH-L
can operate at VCC = 2.7 V and VPP = 2.7 V. Their
low voltage operation capability realizes longer
battery life and suits for cellular phone application.
Their boot, parameter and main-blocked
architecture, flexible voltage and enhanced cycling
capability provide for highly flexible component
suitable for portable terminals and personal
computers. Their enhanced suspend capabilities
provide for an ideal solution for code + data storage
applications. For secure code storage applications,
such as networking, where code is either directly
executed out of flash or downloaded to DRAM, the
LH28F800BG-L/BGH-L offer two levels of protection
: absolute protection with VPP at GND, selective
hardware boot block locking. These alternatives
give designers ultimate control of their code security
needs.
FEATURES
• SmartVoltage technology
– 2.7 V, 3.3 V or 5 V VCC
– 2.7 V, 3.3 V, 5 V or 12 V VPP
• High performance read access time
LH28F800BG-L85/BGH-L85
– 85 ns (5.0±0.25 V)/90 ns (5.0±0.5 V)/
100 ns (3.3±0.3 V)/120 ns (2.7 to 3.6 V)
LH28F800BG-L12/BGH-L12
– 120 ns (5.0±0.5 V)/130 ns (3.3±0.3 V)/
150 ns (2.7 to 3.6 V)
• Enhanced automated suspend options
– Word write suspend to read
– Block erase suspend to word write
– Block erase suspend to read
• Enhanced data protection features
– Absolute protection with VPP = GND
– Block erase/word write lockout during power
transitions
– Boot blocks protection with WP# = VIL
• SRAM-compatible write interface
• Optimized array blocking architecture
– Two 4 k-word boot blocks
– Six 4 k-word parameter blocks
– Fifteen 32 k-word main blocks
– Top or bottom boot location
• Enhanced cycling capability
– 100 000 block erase cycles
• Low power management
– Deep power-down mode
– Automatic power saving mode decreases ICC
in static mode
• Automated word write and block erase
– Command user interface
– Status register
• ETOX^TM∗ V nonvolatile flash technology
• Packages
– 48-pin TSOP Type I (TSOP048-P-1220)
Normal bend/Reverse bend
– 48-ball CSP (FBGA048-P-0808)
∗ ETOX is a trademark of Intel Corporation.
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books,
etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.
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