LH28F400SU-LC Datasheet, PDF (1/37 Pages) Sharp Electrionic Components – 4M (512K × 8, 256K × 16) Flash Memory

LH28F400SU-LC 4M (512K × 8, 256K × 16) Flash Memory
FEATURES
• User-Configurable x8 or x16 Operation
• 5 V Write/Erase Operation
(5 V V_PP, 3.3 V V_CC)
– No Requirement for DC/DC Converter
to Write/Erase
• 150 ns Maximum Access Time
(V_CC = 3.3 V ± 0.3 V)
• Minimum 2.7 V Read Capability
– 190 ns Maximum Access Time
(V_CC = 2.7 V)
• 32 Independently Lockable Blocks (16K)
• 100,000 Erase Cycles per Block
• Automated Byte Write/Block Erase
– Command User Interface
– Status Register
– RY /» BY» Status Output
• System Performance Enhancement
– Erase Suspend for Read
– Two-Byte Write
– Full Chip Erase
• Data Protection - Hardware Erase/Write
Lockout during Power Transitions
– Software Erase/Write Lockout
• Independently Lockable for Write/Erase
on Each Block (Lock Block and Protect
Set/Reset)
• 4 µA (Typ.) I_CC in CMOS Standby
• 0.2 µA (Typ.) Deep Power-Down
• Extended Temperature Operation
– -40°C to +85°C
• State-of-the-Art 0.55 µm ETOX™ Flash
Technology
• 56-Pin, 1.2 mm × 14 mm × 20 mm TSOP
(Type I) Package
• 48-Pin 1.2 mm × 12 mm × 18 mm TSOP
(Type I) Package
• 44-Pin 600-mil SOP Package
56-PIN TSOP
TOP VIEW
NC 1
NC 2
A₁₅
3
A₁₄
4
A₁₃
5
A₁₂
6
A₁₁
7
A₁₀
8
A₉
9
A₈ 10
NC 11
NC 12
WE 13
RP 14
NC 15
NC 16
V_PP 17
RY/BY 18
NC 19
A₁₇ 20
A₇ 21
A₆ 22
A₅ 23
A₄ 24
A₃ 25
A₂ 26
A₁ 27
NC 28
56 NC
55 A₁₆
54 BYTE
53 GND
52 DQ₁₅/A_-1
51 DQ₇
50 DQ₁₄
49 DQ₆
48 DQ₁₃
47 DQ₅
46 DQ₁₂
45 DQ₄
44 V_CC
43 V_CC
42 DQ₁₁
41 DQ₃
40 DQ₁₀
39 DQ₂
38 DQ₉
37 DQ₁
36 DQ₈
35 DQ₀
34 QE
33 GND
32 CE
31 A₀
30 NC
29 NC
28F400SUH-LC15-1
Figure 1. 56-Pin TSOP Configuration
1