LH28F160BG-TL Datasheet, PDF (1/36 Pages) Sharp Electrionic Components – 16 M-bit (1 MB x 16) Smart 3 Flash Memories

LH28F160BG-TL/BGH-TL
LH28F160BG-TL/BGH-TL
16 M-bit (1 MB x 16) Smart 3
Flash Memories
DESCRIPTION
The LH28F160BG-TL/BGH-TL flash memories with • Enhanced automated suspend options
Smart 3 technology are high-density, low-cost,
– Word write suspend to read
nonvolatile, read/write storage solution for a wide
– Block erase suspend to word write
range of applications. The LH28F160BG-TL/
– Block erase suspend to read
BGH-TL can operate at VCC and VPP = 2.7 V.
Their low voltage operation capability realizes
longer battery life and suits for cellular phone
application. Their boot, parameter and main-blocked
architecture, flexible voltage and enhanced cycling
capability provide for highly flexible component
suitable for portable terminals and personal
computers. Their enhanced suspend capabilities
provide for an ideal solution for code + data storage
applications. For secure code storage applications,
such as networking, where code is either directly
executed out of flash or downloaded to DRAM, the
LH28F160BG-TL/BGH-TL offer two levels of
protection : absolute protection with VPP at GND,
• SRAM-compatible write interface
• Optimized array blocking architecture
– Two 4 k-word boot blocks
– Six 4 k-word parameter blocks
Y _{– Thirty-one 32 k-word main blocks}
– Top or bottom boot location
• Enhanced cycling capability
R _{– 100 000 block erase cycles}
• Low power management
A ^{– Deep power-down mode}
– Automatic power saving mode decreases ICC
in static mode
N • Automated word write and block erase
I^{– Command user interface}
selective hardware boot block locking. These
alternatives give designers ultimate control of their
code security needs.
I ^M _FEATURES
• Smart 3 technology
L ^{– 2.7 to 3.6 V VCC}
– 2.7 to 3.6 V or 12 V VPP
• High performance read access time
E _{LH28F160BG-TL10/BGH-TL10}
– 100 ns (2.7 to 3.6 V)
LH28F160BG-TL12/BGH-TL12
P ^{R – 120 ns (2.7 to 3.6 V)}
– Status register
• ETOX^TM∗ V nonvolatile flash technology
• Packages
– 48-pin TSOP Type I (TSOP048-P-1220)
Normal bend/Reverse bend
– 60-ball CSP (FBGA060/048-P-0811)
∗ ETOX is a trademark of Intel Corporation.
COMPARISON TABLE
VERSIONS
LH28F160BG-TL
BIT CONFIGURATION
1 MB x 16
OPERATING TEMPERATURE
0 to +70°C
LH28F160BGH-TL
LH28F160BV-TL^∗
LH28F160BVH-TL^∗
1 MB x 16
2 MB x 8/1 MB x 16
2 MB x 8/1 MB x 16
–25 to +85°C
0 to +70°C
–40 to +85°C
∗ Refer to the datasheet of LH28F160BV-TL/BVH-TL.
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books,
etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.
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