LH28F040SUTD-Z4 Datasheet, PDF (1/32 Pages) Sharp Electrionic Components – 4M (512K × 8) Flash Memory

LH28F040SUTD-Z4 4M (512K × 8) Flash Memory
FEATURES
• 512K × 8 Bit Configuration
• 5 V Write/Erase Operation (5V V_PP, 3.3 V_CC)
– V_CC for Write/Erase at as low as 2.9 V
• Min. 2.7 V Read Capability
– 190 ns Maximum Access Time
(V_CC = 2.7 V)
• 2 Banks Enable the Simultaneous
Read/Write/Erase Operation
• 32 Independently Lockable Blocks (16K)
• 100,000 Erase Cycles per Block
• Automated Byte Write/Block Erase
– Command User Interface
– Status Register
• System Performance Enhancement
– Erase Suspend for Read
– Two-Byte Write
– Bank Erase
• Data Protection
– Hardware Erase/Write Lockout during
Power Transitions
– Software Erase/Write Lockout
• Independently Lockable for Write/Erase
on Each Block (Lock Block and Protect
Set/Reset)
• 20 µA (Maximum) I_CC in CMOS Standby
• State-of-the-Art 0.55 µm ETOX™
Flash Technology
• 40-Pin, 1.2 mm × 10 mm × 20 mm TSOP
(Type I) Package
40-PIN TSOP
TOP VIEW
NC1 1
NC1 2
A₁₁
3
A₉ 4
A₈ 5
A₁₃
6
A₁₄
7
A₁₇
8
WE 9
V_CC 10
V_PP 11
A₁₆ 12
A₁₅ 13
A₁₂ 14
A₇ 15
A₆ 16
A₅ 17
A₄ 18
NC2 19
NC2 20
40 NC
39 OE
38 NC
37 A₁₀
36 BE₁
35 BE₀
34 DQ₇
33 DQ₆
32 DQ₅
31 DQ₄
30 DQ₃
29 GND
28 DQ₂
27 DQ₁
26 DQ₀
25 A₀
24 A₁
23 A₂
22 A₃
21 NC
28F040SUZ4-1
Figure 1. TSOP Configuration
1