English
Language : 

LH28F016LL Datasheet, PDF (1/29 Pages) Sharp Electrionic Components – 16M (1M × 16, 2M × 8) Flash Memory
LH28F016LL
FEATURES
• User-Configurable x8 or x16 Operation
• 3 V Write/Erase Operation (3 V VPP)
– 2.7 - 3.6 V Write-Erase Operation
• 120 ns Maximum Access Time
(VCC = 3.0 V)
• 150 ns Maximum Access Time
(VCC = 2.7 V)
• 32 Independently Lockable Blocks (64K)
• 0.48 MB/sec Write Transfer Rate
• 100,000 Erase Cycles per Block
• Revolutionary Architecture
– Pipelined Command Execution
– Write During Erase
– Command Superset of
Sharp LH28F016SU
• 10 µA (MAX.) ICC in CMOS Standby
• 5 µA (MAX.) Deep Power-Down
• State-of-the Art 0.6 µm ETOX™
Flash Technology
• 56-Pin, 1.2 mm × 14 mm × 20 mm TSOP
(Type I) Package
16M (1M × 16, 2M × 8) Flash Memory
56-PIN TSOP
TOP VIEW
VSSL
1
CE1 2
LX 3
A20
4
A19
5
A18
6
A17
7
A16
8
VCC
9
A15 10
A14 11
A13 12
A12 13
CE0 14
CX 15
RP 16
A11 17
A10 18
A9 19
A8 20
GND 21
A7 22
A6 23
A5 24
A4 25
A3 26
A2 27
A1 28
56 WP
55 WE
54 OE
53 RY/BY
52 DQ15
51 DQ7
50 DQ14
49 DQ6
48 GND
47 DQ13
46 DQ5
45 DQ12
44 DQ4
43 VCC
42 GND
41 DQ11
40 DQ3
39 DQ10
38 DQ2
37 VCC
36 DQ9
35 DQ1
34 DQ8
33 DQ0
32 A0
31 BYTE
30 NC
29 NC
28F016LLT-1
Figure 1. TSOP Configuration
1
 ▷