LH28F008SA Datasheet, PDF (1/27 Pages) Sharp Electrionic Components – 8M (1M × 8) Flash Memory

LH28F008SA
FEATURES
• Very High-Performance Read
– 85 ns Maximum Access Time
• High-Density Symmetrically Blocked
Architecture
– Sixteen 64K Blocks
• Extended Cycling Capability
– 100,000 Block Erase Cycles
– 1.6 Million Block Erase Cycles per Chip
• Automated Byte Write and Block Erase
– Command User Interface
– Status Register
• System Performance Enhancements
– RY /» BY» Status Output
– Erase Suspend Capability
• Deep-Powerdown Mode
– 0.20 µA I_CC Typical
• SRAM-Compatible Write Interface
• Hardware Data Protection Feature
– Erase/Write Lockout during
Power Transitions
• Independent Software Vendor Support
– Microsoft Flash File System™ (FFS)
• ETOX™ Nonvolatile Flash Technology
– 12 V Byte Write/Block Erase
• Industry Standard Packaging
– 40-Pin 1.2 mm × 10 mm × 20 mm
TSOP (Type I) Package
– 44-Pin 600-mil SOP Package
8M (1M × 8) Flash Memory
40-PIN TSOP
TOP VIEW
A₁₉
1
A₁₈
2
A₁₇
3
A₁₆
4
A₁₅
5
A₁₄
6
A₁₃
7
A₁₂
8
CE ⁹
V_CC 10
V_PP 11
PWD 12
A₁₁ 13
A₁₀ 14
A₉ 15
A₈ 16
A₇ 17
A₆ ¹⁸
A₅ 19
A₄ 20
40 NC
39 NC
38 WE
37 OE
36 RY/BY
35 DQ₇
34 DQ₆
33 DQ₅
32 DQ₄
31 V_CC
30 GND
29 GND
28 DQ₃
27 DQ₂
26 DQ₁
25 DQ₀
24 A₀
23 A₁
22 A₂
21 A₃
28F008SA-1
Figure 1. 40-Pin TSOP Configuration
1