LH28F004SU-Z9 Datasheet, PDF (1/31 Pages) Sharp Electrionic Components – 4M (512 × 8) Flash Memory

LH28F004SU-Z9
4M (512 × 8) Flash Memory
FEATURES
• 512K × 8 Word Configuration
• 2.7 V Write/Erase Operation (5 V ± 0.5 V
V_PP, 3.0 V ± 0.3 V V_CC, +15°C to +35°C)
– No Requirement For DC/DC Converter
To Write/Erase
• 150 ns Maximum Access Time
(V_CC = 3.3 V ± 0.3 V)
• Minimum 2.7 V Read Capability
– 190 ns Maximum Access Time
(V_CC = 2.7 V, -20°C to +85°C)
– 180 ns Maximum Access Time
(V_CC = 2.7 V, 0°C to +70°C)
• 32 Independently Lockable Blocks (16K)
• 100,000 Erase Cycles per Block
• Automated Byte Write/Block Erase
– Command User Interface
– Status Register
– RY /» BY» Status Output
• System Performance Enhancement
– Erase Suspend For Read
– Two-Byte Write
– Full Chip Erase
• Data Protection
– Hardware Erase/Write Lockout During
Power Transitions
– Software Erase/Write Lockout
• Independently Lockable For Write/Erase
On Each Block (Lock Block and Protect
Set/Reset)
• 4 µA (Typ.) I_CC In CMOS Standby
• 0.2 µA (Typ.) Deep Power-Down
• State-of-the-Art 0.45 µm ETOX™
Flash Technology
• Extended Temperature Operation
– -20°C to +85°C (Read)
– +15°C to +35°C (Write/Erase)
• 42-pin, 0.67 mm × 8 mm × 8 mm
CSP Package
42-PIN CSP
TOP VIEW
1
2
3
4
5
6
7
A GND DQ₆ V_CC V_CC DQ₂ OE GND
B A₁₇ DQ₇ DQ₄ NC NC DQ₀ CE
C A₁₀ NC DQ₅ NC DQ₃ DQ₁ A₀
D A₁₄ A₁₃ A₉ NC RY/BY A₆ A₃
E A₁₆ A₁₁ WE RP A₇ A₄ A₁
F A₁₅ A₁₂ A₈ V_PP A₁₈ A₅
A₂
28F004SU-Z9 -1
Figure 1. CSP Configuration
INTRODUCTION
Sharp’s LH28F004SU 4M Flash Memory is a revolu-
tionary architecture which enables the design of truly
mobile, high performance, personal computing and
communication products. With innovative capabilities,
3.3 V low power operation and very high read/write
performance, the LH28F004SU is also the ideal choice
for designing embedded mass storage flash memory
systems.
The LH28F004SU’s independently lockable 32 sym-
metrical blocked architecture (16K each) extended
cycling, low power operation, very fast write and read
performance and selective block locking provide a highly
flexible memory component suitable for cellular phone,
facsimile, game, PC, printer and handy terminal. The
LH28F004SU’s 5.0 V/3.3 V power supply operation
enables the design of memory cards which can be read
in 3.3 V system and written in 5.0 V/3.3 V systems. Its
x8 architecture allows the optimization of memory to
processor interface. The flexible block locking option
enables bundling of executable application software in
a Resident Flash Array or memory card. Manufactured
on Sharp’s 0.45 µm ETOX™ process technology, the
LH28F004SU is the most cost-effective, high-density
3.3 V flash memory.
1