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GL610T Datasheet, PDF (1/1 Pages) Sharp Electrionic Components – Ultra-compact Chip Part Type Infrared Emitting Diodes
GL610T
GL610T
Ultra-compact Chip Part Type
Infrared Emitting Diodes
s Features
1. Ultra-compact type (1.6 x 0.8 x 0.8 mm)
2. Thin type (thickness : 0.8 mm)
3. Taped-packed type (4,000 pieces/reel)
4. Leadless type
s Applications
1. Compact and thin remote controllers
2. Tape end detection of VCRs and VCR cameras
3. Power source for car navigator touch panels
4. Other portable equipment
s Absolute Maximum Ratings
(Ta=25˚C)
Parameter
Forward current
*1Peak forward current
Reverse voltage
Power dissipation
Operating temperature
Storage temperature
*2Soldering temperature
Symbol Rating Unit
IF
50
mA
I FM
500
mA
VR
6
V
P
150
mW
Topr - 25 to + 85 ˚C
Tstg - 25 to + 100 ˚C
Tsol
260
˚C
*1 Pulse width <= 100µ s, Duty ratio=0.01
*2 Hand soldering temperature, for MAX. 3 seconds
s Electro-optical Characteristics
Parameter
Forward voltage
*1Peak forward voltage
Reverse current
Radiant flux
Peak emission wavelength
Half intensity wavelength
Response frequency
Half intensity angle
Symbol
VF
V FM
IR
Φe
λp
∆λ
fc
∆θ
s Outline Dimensions
1.6
(0.2)
0.8
0.3
(Unit : mm)
1
2
Chip position
1.2
1.0
(0.3)
(0.3)
Chip side mark
* Plating area
* Terminal connection
1 Anode
2 Cathode
1
2
* Tolerance : ± 0.1mm
Conditions
IF = 50mA
IFM = 0.5A
VR = 3V
IF = 20mA
IF = 20mA
IF = 20mA
-
IF = 20mA
MIN.
-
-
-
0.7
-
-
-
-
TYP.
1.3
2.2
-
2.0
950
40
300
± 60
(Ta=25 ˚C)
MAX. Unit
1.5
V
3.5
V
10
µA
-
mW
-
nm
-
nm
-
kH Z
-
˚
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data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.”