GL533 Datasheet, PDF (1/2 Pages) Sharp Electrionic Components – High Speed Infrared Emitting Diode for Camera AF (Automatic Focusing)

GL533
GL533
High Speed Infrared Emitting
Diode for Camera AF
(Automatic Focusing)
s Features
1. Small spot light diameter for easy beam diaphragming
(TYP. : φ 0.6 mm)
2. High positional accuracy of optical axis (accuracy : ± 0.1 mm)
3. High output type (radiant flux Φ e : TYP. 13mW)
4. Low peak forward voltage type
(peak forward voltage V _FM : TYP. 2.0V)
5. PSD* Equivalent to peak sensitivity wavelength of detectors
(PD3101F and PD3151F)
(peak emission wavelength : TYP. 940 nm)
PSD * : Position Sensitive Device
s Applications
1. Cameras
s Outline Dimensions
(Unit : mm)
Transparent epoxy resin
(Refractive index 1.54)
4.2 ^{± 0.1}
Chip position 2.1 ^{± 0.1}
1
2 - φ 0.45 ^{± 0.1}
2.5 ^{± 0.3}(g )
φ 5.4
1
2
1.0
2
1 Anode
2 Cathode
g Dimension at lead root
* ( ) : Reference dimensions
s Absolute Maximum Ratings
(Ta=25˚C)
Parameter
Forward current
*1_{Peak forward current}
Reverse voltage
Power dissipation
Operating temperature
Storage temperature
*2_{Soldering temperature}
Symbol Rating Unit
IF
80
mA
I FM
1
A
VR
6
V
P
120
mW
Topr - 25 to +100 ˚C
Tstg - 30 to +100 ˚C
Tsol
260
˚C
*1 Pulse width <=100 µ s, Duty ratio=0.01
*2 For MAX. 3 seconds at the position of 1.3 mm from the bottom surface of resin
Soldering area
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data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.”