GL4910 Datasheet, PDF (1/4 Pages) Sharp Electrionic Components – Side View Type Infrared Emitting Diode for Camera AF (Automatic Focusing)

GL4910
s Features
1. Small spot light diameter for easy beam diaphragming
(*Apparent emission diameter : TYP. φ 0.32 mm)
2. Uniform emission intensity on chip emitting surface
3. Low peak forward voltage type
(Peak forward voltage V _FM: TYP. 1.7V)
* Expansion range on lens surface of infrared emitted from chips
s Applications
1. Cameras
GL4910
Side View Type Infrared Emitting
Diode for Camera AF
(Automatic Focusing)
s Outline Dimensions
(Unit : mm)
4.0 ^{± 0.2}
2.0 ^{± 0.2}
0.8
0.8
1.5
0.5
Chip center
Pink
R1.75^{± 0.1 8˚}
8˚ ^transparent
epoxy resin
1
2
-
0.45
+
-
0.2
0.1
1
2- 0.28
2- 0.77
2
2.54
8˚
8˚
(Chip position ^8˚
: 2.65)
8˚
2
-
0.4 ^+-
0.2
0.1
2
1 Cathode
2 Anode
8˚
8˚
* ( ) : Reference dimensions
* Tolerance : ± 0.15 mm
s Absolute Maximum Ratings
(Ta=25˚C)
Parameter
Forward current
*1_{Peak forward current}
Reverse voltage
Operating temperature
Storage temperature
*2_{Soldering temperature}
Symbol Rating Unit
IF
50
mA
I FM
1
A
VR
4
V
Topr - 25 to + 60 ˚C
Tstg - 40 to + 85 ˚C
Tsol
260
˚C
*1 30,00 cycles max. on pulse conditions shown in the right drawing
*2 For 5 seconds at the position of 2.15 mm from the resin edge
120 µ s
IFM
500 µ s
32ms (64 pulses)
1s (1 cycle)
Soldering area
“ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.”