GL4800 Datasheet, PDF (1/3 Pages) Sharp Electrionic Components – Thin Type Infrared Emitting Diode

GL4800
GL4800
Thin Type Infrared Emitting
Diode
s Features
1. Thin type ( Thickness : 1.5mm )
2. Beam angle ( ∆θ : TYP. ± 30˚)
3. Radiant flux
( Φ _e : MIN. 0.7mW at I _F = 20mA )
4. Epoxy resin package
s Applications
1. Floppy disk drives
2. Optoelectronic switches
s Outline Dimensions
(Unit : mm )
2 - C0.5
3.0 ^{± 0.2}
1.6
φ 0.8
2 - 0.45
2 - 0.9
1.5 ^{± 0.2}
0.8
Pink transparent
epoxy resin
0.7
1
2
1 Anode
2.54
0.25
2 Cathode
1
2
s Absolute Maximum Ratings
(Ta = 25˚C )
Parameter
Power dissipation
Forward current
*1_{Peak forward current}
Reverse voltage
Operating temperature
Storage temperature
*2_{Soldering temperature}
Symbol
Rating
Unit
P
75
mW
IF
50
mA
I FM
1
A
VR
6
V
T opr
- 25 to + 85
˚C
T stg
- 40 to + 85
˚C
T sol
260
˚C
*1 Pulse width<=100µ s, Duty ratio= 0.01
*2 For 3 seconds at the position of 1.8mm from the surface of resin edge.
s Electro-optical Characteristics
Parameter
Forward voltage
Peak forward voltage
Reverse current
Terminal capacitance
Frequency response
Radiant flux
Peak emission wavelength
Half intensity wavelength
Symbol
VF
V FM
IR
Ct
fc
Φe
λp
∆λ
Conditions
IF = 20mA
IFM = 0.5A
VR = 3V
VR = 0, f = 1MHz
-
IF = 20mA
IF = 5mA
IF = 5mA
MIN.
-
-
-
-
-
0.7
-
-
TYP.
1.2
3.0
-
70
300
1.6
950
45
( Ta = 25˚C)
MAX. Unit
1.4
V
4.0
V
10
µA
-
pF
-
kHz
3.0 mW
-
nm
-
nm
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data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device. ”