SGM44601 Datasheet, PDF (5/12 Pages) SG Micro Corp – DPDT Analog Switch

SGM44601
4Ω, High Speed, Low Voltage
Dual, DPDT Analog Switch
ELECTRICAL CHARACTERISTICS
(V₊ = +2.7V to +3.6V, V_IH = +1.6V, V_IL = +0.4V, T_A = -40℃ to +85℃. Typical values are at V₊ = +3.0V, T_A = +25℃, unless otherwise
noted.)
PARAMETER
SYMBOL
CONDITIONS
TEMP
MIN TYP MAX UNITS
ANALOG SWITCH
Analog Signal Range
On-Resistance
VNO, VNC, VCOM
RON
V₊ = 2.7V, 0V ≤ V_NO or V_NC ≤ V₊,
I_COM = -100mA, Test Circuit 1
-40℃ to +85℃ 0
V+
V
+25℃
10 15 Ω
-40℃ to +85℃
18 Ω
On-Resistance Match Between
Channels
RON
V+ = 2.7V, 0V ≤ VNO or VNC ≤ V+,
I_COM = -100mA, Test Circuit 1
+25℃
-40℃ to +85℃
13
Ω
4
Ω
On-Resistance Flatness
Source OFF Leakage Current
Channel ON Leakage Current
DIGITAL INPUTS
R_FLAT(ON)
V+ = 2.7V, 0V ≤ VNO or VNC ≤ V+,
I_COM = -100mA, Test Circuit 1
INC(OFF), INO(OFF)
I_NC(ON), I_NO(ON),
ICOM(ON)
V+ = 3.6V, VNO or VNC = 3.3V/0.3V,
V_COM = 0.3V/3.3V
V₊ = 3.6V, V_COM = 0.3V/3.3V,
VNO or VNC = 0.3V/3.3V or floating
+25℃
-40℃ to +85℃
-40℃ to +85℃
-40℃ to +85℃
69
Ω
12 Ω
1 μA
1 μA
Input High Voltage
VINH
Input Low Voltage
V_INL
Input Leakage Current
IIN
DYNAMIC CHARACTERISTICS
V+ = 2.7V, VIN = 0V or2.7V
-40℃ to +85℃ 1.5
-40℃ to +85℃
-40℃ to +85℃
V
0.4 V
1 μA
Turn-On Time
Turn-Off Time
Break-Before-Make Time Delay
Charge Injection
Off Isolation
tON
t_OFF
tD
Q
OISO
VNC or VNO = 1.5V, RL = 300Ω,
C_L = 35pF, Test Circuit2
VNC or VNO = 1.5V, RL = 300Ω,
C_L = 35pF, Test Circuit4
V_G = GND, R_G = 0Ω, C_L = 1.0nF,
Q = CL × VOUT, Test Circuit3
Signal = 0dBm, RL = 50Ω, ^1MH
Test Circuit5
10MHz
+25℃
+25℃
+25℃
+25℃
+25℃
+25℃
45
ns
44
ns
23
ns
2.6
pC
-75
dB
-55
dB
Channel-to-Channel Crosstalk
-3dB Bandwidth
Channel ON Capacitance
XTALK
Signal = 0dBm, RL = 50Ω,
Test Circuit6
BW
Signal = 0dBm, RL = 50Ω,
Test Circuit7
C_NC(ON), C_NO(ON),
CCOM(ON)
1MHz
10MHz
+25℃
+25℃
+25℃
+25℃
-100
-60
300
43.2
dB
dB
MHz
pF
SG Micro Corp
5
www.sg-micro.com