SGM44599 Datasheet, PDF (5/13 Pages) SG Micro Corp – DPDT Analog Switch

SGM44599
4Ω, High Speed, Low Voltage
Dual, DPDT Analog Switch
ELECTRICAL CHARACTERISTICS
(V+ = +2.7V to +3.6V, VIH = +1.6V, VIL = +0.4V, TA = -40°C to +85°C. Typical values are at V+ = +3.0V, TA = +25°C, unless otherwise
noted.)
PARAMETER
ANALOG SWITCH
Analog Signal Range
On-Resistance
SYMBOL
CONDITIONS
VNO, VNC, VCOM
RON
V₊ = 2.7V, 0V ≤ V_NO or V_NC ≤ V₊,
ICOM = -100mA, Test Circuit 1
On-Resistance Match
Between Channels
R_ON
V+ = 2.7V, 0V ≤ VNO or VNC ≤ V+,
I_COM = -100mA, Test Circuit 1
On-Resistance Flatness
RFLAT(ON)
V₊ = 2.7V, 0V ≤ V_NO or V_NC ≤ V₊,
ICOM = -100mA, Test Circuit 1
Source OFF Leakage Current
INC(OFF), INO(OFF)
V₊ = 3.6V, V_NO or V_NC = 3.3V/0.3V,
VCOM = 0.3V/3.3V
Channel ON Leakage Current
I_NC(ON), I_NO(ON), V₊ = 3.6V, V_COM = 0.3V/3.3V,
ICOM(ON)
VNO or VNC = 0.3V/3.3V or floating
DIGITAL INPUTS
Input High Voltage
VINH
Input Low Voltage
V_INL
Input Leakage Current
I_IN
DYNAMIC CHARACTERISTICS
V₊ = 2.7V, V_IN = 0V or 2.7V
Turn-On Time
Turn-Off Time
tON
V_NC or V_NO = 1.5V, R_L = 300Ω,
t_OFF
C_L = 35pF, Test Circuit2
Break-Before-Make
Time Delay
t_D
V_NC or V_NO = 1.5V, R_L = 300Ω,
CL = 35pF, Test Circuit4
Charge Injection
Q
VG = GND, RG = 0Ω, CL = 1.0nF,
Q = C_L × V_OUT, Test Circuit3
Off Isolation
O_ISO
Signal = 0dBm, R_L = 50Ω, ^1MHz
Test Circuit5
10MHz
Channel-to-Channel Crosstalk
XTALK
Signal = 0dBm, RL = 50Ω, ^1MHz
Test Circuit6
10MHz
-3dB Bandwidth
Channel ON Capacitance
BW
Signal = 0dBm, R_L = 50Ω,
Test Circuit7
CNC(ON), CNO(ON),
CCOM(ON)
TEMP
MIN TYP MAX UNITS
-40°C to +85°C 0
V+
V
+25°C
10 15
Ω
-40°C to +85°C
18
Ω
+25°C
13
Ω
-40°C to +85°C
4
Ω
+25°C
69
Ω
-40°C to +85°C
12
Ω
-40°C to +85°C
1
μA
-40°C to +85°C
1
μA
-40°C to +85°C 1.5
-40°C to +85°C
-40°C to +85°C
V
0.4 V
1
μA
+25°C
+25°C
+25°C
+25°C
+25°C
+25°C
+25°C
+25°C
+25°C
+25°C
38.0
44.0
5.8
2.6
-75
-55
-100
-60
300
43.2
ns
ns
ns
pC
dB
dB
dB
dB
MHz
pF
SG Micro Corp
5
www.sg-micro.com