SGM3003_15 Datasheet, PDF (4/10 Pages) SG Micro Corp – Ultra Low ON-Resistance

SGM3003
Ultra Low ON-Resistance,
Low Voltage, SPDT Analog Switch
ELECTRICAL CHARACTERISTICS
(V₊ = +3V ± 10%, GND = 0V, T_A = -40℃ to +125℃. Typical values are at T_A = +25℃, unless otherwise noted.)
SGM3003
PARAMETER
ANALOG SWITCH
SYMBOL
CONDITIONS
+25℃
-40℃ to
+125℃
UNITS
Analog Signal Range
On-Resistance
V_NO, V_NC, V_COM
RON
0 ≤ V_NO or V_NC ≤ V₊, I_COM = -10mA,
Test Circuit 1
0
V
V+
V
0.6
Ω
1.0
1.3
Ω
On-Resistance Flatness
R_FLAT(ON)
0 ≤ VNO or VNC ≤ V+, ICOM = -10mA,
Test Circuit 1
0.18
Ω
0.3
0.4
Ω
LEAKAGE CURRENTS
Source OFF Leakage
Current
INC(OFF), INO(OFF)
V_NO or V_NC = 3V/1V, V_COM = 1V/3V,
V+ = +3.3V, Test Circuit 2
±5
nA
±11 ±1000
nA
Channel ON Leakage
Current
INC(ON), INO(ON),
I_COM(ON)
VNO or VNC = VCOM = 1V or 3V,
V₊ = +3.3V , Test Circuit 3
±5
nA
±11 ±1000
nA
DIGITAL INPUTS
Input High Voltage
Input Low Voltage
Input Current
V_INH
VINL
IINL or IINH
VIN = VINH or VINL
2.0
V
0.4
V
±0.01
μA
±0.1
±1
μA
DYNAMIC CHARACTERISTICS
Turn-On Time
t_ON
VNO or VNC = 2V, RL = 300Ω, CL = 35pF,
Test Circuit 4
32
ns
Turn-Off Time
t_OFF
VNO or VNC = 2V, RL = 300Ω, CL = 35pF,
Test Circuit 4
20
ns
Charge Injection
Q
CL = 1.0nF, VG = 0V, RG = 0Ω,
Test Circuit 5
10
pC
Break-Before-Make Time
Delay
t_D
VNO1 or VNC1 = VNO2 or VNC2 = 2V,
R_L = 300Ω, C_L = 35pF, Test Circuit 6
12
ns
Off Isolation
OISO
R_L = 50Ω, C_L = 5pF,
Test Circuit 7
f = 100kHz -55
f = 10kHz
-75
dB
dB
Total Harmonic Distortion
-3dB Bandwidth
Source OFF Capacitance
Channel ON Capacitance
POWER REQUIREMENTS
THD
BW
C_NC(OFF), C_NO(OFF)
C_NC(ON), C_NO(ON),
C_COM(ON)
f = 20Hz to 20kHz, V_COM = 2V_P-P,
RL = 600Ω, CL = 50pF
RL = 50Ω, CL = 5pF, Test Circuit 8
0.06
30
82
380
%
MHz
pF
pF
Power Supply Current
I+
V+ = +3.3V, VIN = 0V or 3V
0.001
μA
1
μA
MIN/
MAX
MIN
MAX
TYP
MAX
TYP
MAX
TYP
MAX
TYP
MAX
MIN
MAX
TYP
MAX
TYP
TYP
TYP
TYP
TYP
TYP
TYP
TYP
TYP
TYP
TYP
MAX
SG Micro Corp
4
www.sg-micro.com