NB104-S Datasheet, PDF (8/8 Pages) Seoul Semiconductor – CHIP LED DEVICE

10 . Rank Division
NB104-S-65
NB104-S-70
V_F[V]
at I_F=5[mA]
2.70~2.80(A)
2.80~2.90(B)
2.90~3.00(C)
3.00~3.10(D)
3.10~3.20(E)
2.70~2.80(A)
2.80~2.90(B)
2.90~3.00(C)
3.00~3.10(D)
3.10~3.20(E)
2.70~2.80(A)
2.80~2.90(B)
2.90~3.00(C)
3.00~3.10(D)
3.10~3.20(E)
2.70~2.80(A)
2.80~2.90(B)
2.90~3.00(C)
3.00~3.10(D)
3.10~3.20(E)
2.70~2.80(A)
2.80~2.90(B)
2.90~3.00(C)
3.00~3.10(D)
3.10~3.20(E)
2.70~2.80(A)
2.80~2.90(B)
2.90~3.00(C)
3.00~3.10(D)
3.10~3.20(E)
I_V[mcd]
at I_F=5[mA]
11~23(A)
11~23(A)
11~23(A)
11~23(A)
11~23(A)
23~38(B)
23~38(B)
23~38(B)
23~38(B)
23~38(B)
38~55(C)
38~55(C)
38~55(C)
38~55(C)
38~55(C)
11~23(A)
11~23(A)
11~23(A)
11~23(A)
11~23(A)
23~38(B)
23~38(B)
23~38(B)
23~38(B)
23~38(B)
38~55(C)
38~55(C)
38~55(C)
38~55(C)
38~55(C)
λ_D[nm]
BIN
at I_F=5[mA]
462.0~470.0(B)
01
462.0~470.0(B)
02
462.0~470.0(B)
03
462.0~470.0(B)
04
462.0~470.0(B)
05
462.0~470.0(B)
06
462.0~470.0(B)
07
462.0~470.0(B)
08
462.0~470.0(B)
09
462.0~470.0(B)
10
462.0~470.0(B)
11
462.0~470.0(B)
12
462.0~470.0(B)
13
462.0~470.0(B)
14
462.0~470.0(B)
15
470.0~475.0(C)
16
470.0~475.0(C)
17
470.0~475.0(C)
18
470.0~475.0(C)
19
470.0~475.0(C)
20
470.0~475.0(C)
21
470.0~475.0(C)
22
470.0~475.0(C)
23
470.0~475.0(C)
24
470.0~475.0(C)
25
470.0~475.0(C)
26
470.0~475.0(C)
27
470.0~475.0(C)
28
470.0~475.0(C)
29
470.0~475.0(C)
30
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