UPGT801 Datasheet, PDF (5/10 Pages) Seoul Semiconductor – surface-mount LED

2. Absolute maximum ratings
Parameter
Symbol
Value
Unit
Power Dissipation
P_d
123
mW
Forward Current
I_F
30
mA
Peak Forward Current
I_FM ^*2
90
mA
Reverse Voltage
V_R
5
V
Operating Temperature
T_opr
-40 ~ +100
o_C
Storage Temperature
T_stg
-40 ~ +100
o_C
*1 Care is to be taken that power dissipation does not exceed the absolute maximum rating of the product.
*2 IFM was measured at TW ≤ 1msec of pulse width and D ≤ 1/10 of duty ratio.
3. Electric characteristics
Parameter
Forward Voltage
Reverse Current
Luminance Intensity ^*1
Peak Wavelength
Dominant Wavelength
Spectral Bandwidth 50%
Viewing Angle ^*2
Symbol Condition
Min
V_F
I_R
I_V
λ_P
λ_d
∆λ
2θ _½
I_F =20mA
1.7
V_R=5V
-
I_F =20mA
12
I_F =20mA
-
I_F =20mA
554
I_F =20mA
-
I_F =20mA
-
Typ
Max
Unit
2.2
2.7
V
-
10
µA
17
36
mcd
557
-
nm
562
566
nm
30
-
nm
120
-
deg.
*1. The luminous intensity IV was measured at the peak of the spatial pattern which may not be aligned with the mechanical axis of
the LED package. Luminous Intensity Measurement allowance is ±10%
*2. 2θ½ is the off-axis where the luminous intensity is 1/2 of the peak intensity.
Document No. : SSC-QP-7-07-24 (Rev.00)