MBT801 Datasheet, PDF (5/10 Pages) Seoul Semiconductor – surface-mount LED

2. Absolute maximum ratings
Parameter
Symbol
Value
Unit
Power Dissipation
Forward Current
Peak Forward Current
Reverse Voltage
Operating
Temperature
P_d
I_F
I_FM ^*2
V_R
T_opr
120
30
90
5
-40 ~ +100
mW
mA
mA
V
o_C
Storage Temperature
T_stg
-40 ~ +100
o_C
*1 Care is to be taken that power dissipation does not exceed the absolute maximum rating of the product.
*2 IFM was measured at TW ≤ 1msec of pulse width and D ≤ 1/10 of duty ratio.
3. Electric characteristics
Parameter
Forward Voltage
Reverse Current
Luminance Intensity ^*1
Peak Wavelength
Dominant Wavelength
Spectral Bandwidth 50%
Viewing Angle ^*2
Symbol
V_F
I_R
I_V
λ_P
λ_d
∆λ
2θ _½
Condition
I_F
=20mA
V_R=5V
I_F
=20mA
I_F
=20mA
I_F
=20mA
I_F
=20mA
I_F
=20mA
Min
2.7
-
70
-
464
-
-
Typ Max Unit
3.2
4.0
V
-
10
µA
335 600 mcd
465
-
nm
470
476
nm
23
-
nm
120
-
deg.
*1. The luminous intensity IV was measured at the peak of the spatial pattern which may not be aligned with the
mechanical axis of the LED package. Luminous Intensity Measurement allowance is ±10%
*2. 2θ½ is the off-axis where the luminous intensity is 1/2 of the peak intensity.
Rev. 00
November 2007
www.ZLED.com
Document No. : SSC-QP-7-07-24 (Rev.00)