THB105-69 Datasheet, PDF (4/12 Pages) Seoul Semiconductor – Surface-mounted chip LED device

1. Absolute maximum ratings
Parameter
Symbol
Power Dissipation
P_d
Forward Current
I_F
Peak Forward Current
I_FM*1
Reverse Voltage
V_R
Operating Temperature
T_opr
Storage Temperature
T_stg
*1 I_FM conditions: Pulse width Tw≤0.1ms and Duty ratio≤1/10.
Value
64
20
50
5
-35 ~ 85
-40 ~ 100
(Ta=25℃)
Unit
㎽
㎃
㎃
V
℃
℃
2. Electro-Optical Characteristics
Parameter
Symbol Condition
Min
Typ
Max
Forward Voltage
V_F
I_F=5㎃
2.7
3.05
3.2
V_Fm
I_F=1㎂
1.8
-
2.7
Forward Zener Voltage
V_F(Z)
I_F(Z)=10㎃
0.6
0.8
1.5
Luminous Intensity^*2
I_V
I_F=5㎃
23
30
55
Wavelength
λ_D
I_F=5㎃
465
470
475
Spectral Bandwidth
∆λ
I_F=5㎃
-
25
-
Viewing angle^*3
2θ_1/2
I_F=5㎃
-
120
-
*2 The luminous intensity IV is measured at the peak of the spatial pattern which may not be aligned with the mechanical axis of the
LED package.
*3 θ_1/2 is the off-axis where the luminous intensity is 1/2 the peak intensity.
(Ta=25℃)
Unit
V
V
mcd
㎚
㎚
˚
♦ Eelctrical Characteristics of the Zener Diode
Parameter
Condition
Min
Typ
Max
Unit
V_F
I_F=10㎃
-
I_R
V_R=5V
-
-
1.6
V
-
1.0
㎂
[Note] All products confirm to the listed minimum and maximum specifications for electric and optical characteristics, when operated at
20mA within the maximum ratings shown above. All measurements were made under the standardized environment of SSC.
(Tolerance : I_v ±10 %, λ_D ±2 nm, V_F ±0.1 V)
Rev. 00
September 2008
www.ZLED.com
Document No. : SSC-QP-7-07-24 (Rev.00)