STW8C2PB Datasheet, PDF (4/30 Pages) Seoul Semiconductor – Achieving the best system cost in Mid/High Power

Performance Characteristics
Product Data Sheet
STW8C2PB – Mid-Power LED
Table 3. Characteristics, I_F=200mA, T_j= 25ºC, RH30%
Parameter
Forward Current
Forward Voltage^[1]
Luminous Intensity (5000K)^[1]
Luminous Intensity (2700K)^[1]
CRI^[1]
Viewing Angle ^[2]
Thermal resistance (J to S) ^[3]
ESD Sensitivity(HBM) ^[4]
Symbol
I_F
V_F
I_v
I_v
R_a
2Θ_1/2
Rθ_J-S
-
Min.
-
2.9
-
-
80
-
-
Value
Typ.
Max.
200
-
-
3.2
29.5
-
27.7
-
-
-
120
-
15
-
Class 2 JESD22-A114-E
Unit
mA
V
cd
cd
Deg.
℃/W
Table 4. Absolute Maximum Ratings
Parameter
Forward Current
Power Dissipation
Junction Temperature
Operating Temperature
Storage Temperature
Symbol
I_F
P_D
T_j
T_opr
T_stg
Value
400
1.44
125
-40~ + 85
-40 ~ + 100
Unit
mA
W
ºC
ºC
ºC
Notes :
(1) Tolerance : VF :±0.1V, IV :±7%, Ra :±2, x,y :±0.005
(2) 2Θ_1/2 is the off-axis where the luminous intensity is 1/2 of the peak intensity.
(3) Thermal resistance : Rth_JS (Junction / solder)
(4) The products are sensitive to static electricity and must be carefully taken when handling products.
• LED’s properties might be different from suggested values like above and below tables if
operation condition will be exceeded our parameter range. Care is to be taken that power
dissipation does not exceed the absolute maximum rating of the product.
• Thermal resistance can be increased substantially depending on the heat sink design/operating
condition, and the maximum possible driving current will decrease accordingly.
• All measurements were made under the standardized environment of Seoul Semiconductor.
Rev1.0, Mar 22, 2016
4
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