SAW8A32E Datasheet, PDF (4/31 Pages) Seoul Semiconductor – High Color Quality, CRI Min. 80

Performance Characteristics
Product Data Sheet
SAW8A32E – Mid-Power LED
Table 3. Characteristics, I_F=100mA, T_j= 25ºC, RH30%
Parameter
Forward Current
Forward Voltage
Luminous Intensity^[1] (2,700K)^[2]
CRI ^[3]
Viewing Angle
Storage Temperature
Thermal resistance (J to S) ^[4]
ESD Sensitivity(HBM)
Symbol
I_F
V_F
I_v
R_a
2Θ_1/2
T_stg
Rθ_J-S
-
Min.
-
-
-
80
-
- 40
-
Value
Typ.
Max.
100
120
9.5
10.0
37.8
-
83
90
120
-
-
+ 85
15
-
Class 2 JESD22-A114-E
Unit
mA
V
cd
Deg.
ºC
℃/W
Table 4. Absolute Maximum Ratings
Parameter
Forward Current
Power Dissipation
Junction Temperature
Operating Temperature
Storage Temperature
Symbol
I_F
P_D
T_j
T_opr
T_stg
Value
120
1.20
125
-40 ~ + 85
-40 ~ + 100
Unit
mA
W
ºC
ºC
ºC
Notes :
(1) Seoul Semiconductor maintains a tolerance of 7% on Intensity and power measurements.
(2) Correlated Color Temperature is derived from the CIE 1931 Chromaticity diagram.
Color coordinate : 0.005, CCT 5% tolerance.
(3) Tolerance is 2.0 on CRI , 0.3 on VF measurements.
(4) Thermal resistance is junction to Solder.
(5) I_FP conditions with pulse width ≤10ms and duty cycle ≤10%
(6) The products are sensitive to static electricity and must be carefully taken when handling products
• Calculated performance values are for reference only.
• All measurements were made under the standardized environment of Seoul Semiconductor.
Rev2.3, Oct 4, 2016
4
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