KWT803-S Datasheet, PDF (4/14 Pages) Seoul Semiconductor – surface-mount LED

2. Absolute maximum ratings^*1
Parameter
Symbol
Value
Unit
Power Dissipation
P_d
111
mW
Forward Current
I_F
30
mA
Peak Forward Current
I_FM ^*2
90
mA
Reverse Voltage
V_R
5
V
Operating Temperature
T_opr
-40 ~ +100
ºC
Storage Temperature
T_stg
-40 ~ +100
ºC
*1 Care is to be taken that power dissipation does not exceed the absolute maximum rating of the product.
*2 I_FM was measured at T_W ≤ 1msec of pulse width and D ≤ 1/10 of duty ratio.
3. Electro-Optical characteristics
Parameter
Forward Voltage
Reverse Current
Luminous Intensity^*1
Viewing Angle ^*2
ESD ( HBM )
Symbol
V_F
I_R
I_V
2θ _½
Condition
I_F =20mA
V_R=5V
I_F =20mA
I_F =20mA
1.5kΩ ;
100pF
Min
2.7
-
1200
-
1
Typ
3.3
-
1600
115
-
Max
3.7
10
2400
-
-
Unit
V
µA
mcd
deg.
KV
*1. The luminous intensity IV was measured at the peak of the spatial pattern which may not be aligned with the mechanical
axis of the LED package. Luminous Intensity Measurement allowance is ±10%
*2. 2θ½ is the off-axis where the luminous intensity is 1/2 of the peak intensity.
[Note] All measurements were made under the standardized environment of SSC.
Rev. 02
April 2008
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