HYT722_1 Datasheet, PDF (4/13 Pages) Seoul Semiconductor – TOP LED DEVICE

2. Absolute maximum ratings
Parameter
Symbol
Value
Unit
Power Dissipation
P_d
252
mW
Forward Current
I_F
90
mA
Peak Forward Current
I_FM ^*2
100
mA
Reverse Voltage (per die)
V_R
5
V
Operating Temperature
T_opr
-40 ~ +85
ºC
Storage Temperature
T_stg
-40 ~ +100
ºC
*1 Care is to be taken that power dissipation does not exceed the absolute maximum rating of the product.
*2 IFM was measured at T_W ≤ 1msec of pulse width and D ≤ 1/10 of duty ratio.
3. Electric & Optical characteristics
Parameter
Sym
bol
Condition
Min
Forward Voltage (per die) V_F
I_F =20 mA 1.6
Reverse Current (per die) I_R
V_R=5V
-
Typ Max Unit
2.2 2.8
V
-
10
µA
Luminance Intensity ^*1
I_V I_F =60 mA 950 1400 1700 mcd
Luminance Flux
Φ_V
I_F =60 mA
-
4
-
lm
Dominant Wavelength
λ_d
I_F =60 mA 582
590
598
nm
Peak Wavelength
λ_P
I_F =60mA
-
593
-
nm
Spectral Bandwidth
∆λ
I_F =60 mA
-
18
-
nm
Viewing Angle ^*2
2θ_½ I_F =60 mA
-
120
-
deg
Optical Efficiency
η_opt I_F =60 mA
-
30
-
lm/W
*1. The luminous intensity IV was measured at the peak of the spatial pattern which may not be aligned
with the mechanical axis of the LED package. Luminous Intensity Measurement allowance is ±10%
*2. 2θ½ is the off-axis where the luminous intensity is 1/2 of the peak intensity.
[Note] All measurements were made under the standardized environment of SSC.