HB601R Datasheet, PDF (4/12 Pages) Seoul Semiconductor – 2.1*1.0*0.6 mm Side Type Wavelength: 470nm

2. Absolute maximum ratings
Parameter
Symbol
Power Dissipation
Forward Current
Peak Forward Current
Reverse Voltage
Operation Temperature
Storage Temperature
P_d
I_F
I_FM ^*1
V_R
T_opr.
T_stg.
*1 I_FM conditions: Pulse width Tw≤0.1ms and Duty ratio≤1/10
Value
64
20
50
5
-35 ~ 85
-40 ~ 100
(Ta=25℃)
Unit
mW
mA
mA
V
℃
℃
3. Electro-Optical Characteristics
(Ta=25℃)
Parameter
Forward Voltage
Reverse Current
Luminous Intensity^*2
Wavelength
Spectral Bandwidth
Viewing Angle^*3
Symbol Condition Min
Typ
Max Unit
V_F
I_F=5 ㎃
2.7
3.05
3.2
V
I_R
V_R=5V
-
-
10
㎂
I_V
I_F=5 ㎃
14
17
40
mcd
λ_d
I_F=5 ㎃
466
470
475
nm
Δλ
I_F=5 ㎃
-
25
-
nm
2θ_1/2
I_F=5 ㎃
-
120
-
˚
*2 The luminous intensity IV is measured at the peak of the spatial pattern which may not be aligned with the mechanical axis of the
LED package.
*3 θ_1/2 is the off-axis where the luminous intensity is 1/2 the peak intensity.
[Note] All products confirm to the listed minimum and maximum specifications for electric and optical characteristics, when operated at
20mA within the maximum ratings shown above. All measurements were made under the standardized environment of SSC.
(Tolerance : I_v ±10 %, λ_D ±2 nm, V_F ±0.1 V)
Rev.01
December 2010
www.seoulsemicon.com
Document No. : SSC-QP-7-07-24 (Rev.00)