E2-STW8Q14D Datasheet, PDF (4/31 Pages) Seoul Semiconductor – Enabling the Best lm/W in Mid Power Range

Performance Characteristics
Product Data Sheet
E2-STW8Q14D – Mid-Power LED
Table 3. Characteristics, I_F=65mA, T_j= 25ºC, RH30%
Parameter
Forward Current
Luminous Intensity^[1] (5,000K)^[2]
CRI ^[3]
Viewing Angle
Thermal resistance (J to S) ^[4]
ESD Sensitivity(HBM)
Symbol
I_F
I_v
R_a
2Θ_1/2
Rθ_J-S
-
Min.
-
10.5
80
-
-
Value
Typ.
Max.
65
180
11.0
-
83
90
120
-
15
-
Class 3A JESD22-A114-E
Unit
mA
cd
Deg.
℃/W
Table 4. Absolute Maximum Ratings
Parameter
Forward Current
Froward Voltage
Power Dissipation
Junction Temperature
Operating Temperature
Storage Temperature
Symbol
I_F
V_F
P_D
T_j
T_opr
T_stg
Value
180
3.0
052
125
-40 ~ + 85
-40 ~ + 100
Unit
mA
V
W
ºC
ºC
ºC
Notes :
(1) Seoul Semiconductor maintains a tolerance of 7% on Intensity and power measurements.
(2) Correlated Color Temperature is derived from the CIE 1931 Chromaticity diagram.
Color coordinate : 0.005, CCT 5% tolerance.
(3) Tolerance is 2.0 on CRI measurements.
(4) Thermal resistance is junction to Solder.
(5) I_FP conditions with pulse width ≤10ms and duty cycle ≤10%
• Calculated performance values are for reference only.
• All measurements were made under the standardized environment of Seoul Semiconductor.
Rev1.3, Dec 21, 2015
4
www.seoulsemicon.com