CAWT722-S Datasheet, PDF (4/18 Pages) Seoul Semiconductor – surface-mount LED

2. Absolute maximum ratings
Parameter
Symbol
Value
Unit
Power Dissipation
P_d
342
mW
Forward Current
I_F
90
mA
Peak Forward Current
I_FM ^*2
100
mA
Reverse Voltage (per die)
V_R
5
V
Operating Temperature
T_opr
-40 ~ +85
ºC
Storage Temperature
T_stg
-40 ~ +100
ºC
*1 Care is to be taken that power dissipation does not exceed the absolute maximum rating of the product.
*2 IFM was measured at T_W ≤ 1msec of pulse width and D ≤ 1/10 of duty ratio.
3. Electric & Optical characteristics
Parameter
Symbol Condition Min
Typ
Max
Unit
Forward Voltage (per die)
V_F
I_F =60 mA
2.9
3.2
3.6
V
Reverse Current (per die)
Luminance Intensity ^*1
Luminance Flux
Color Temperature
Color Coordinate
I_R
I_V
Φ_V
CCT
X
Y
V_R=5V
I_F =60 mA
I_F =60 mA
I_F =60 mA
I_F =60 mA
-
-
-
2500
0.3545
0.3408
-
4500
11
-
-
-
10
5500
13.1
4600
0.4970
0.4466
µA
mcd
lm
K
-
Viewing Angle ^*2
2θ_½
I_F =60 mA
-
120
-
deg
Optical Efficiency
η_op
I_F =60 mA
-
57
68
lm/W
Color Rendering Index
Ra
I_F =60 mA
-
95
-
*1. The luminous intensity IV was measured at the peak of the spatial pattern which may not be aligned
with the mechanical axis of the LED package. Luminous Intensity Measurement allowance is ±10%
*2. 2θ½ is the off-axis where the luminous intensity is 1/2 of the peak intensity.
[Note] All measurements were made under the standardized environment of SSC.
Rev. 02
November 2008
www.ZLED.com
SSC-QP-7-07-24 (Rev.00)