STB0FS12A Datasheet, PDF (3/20 Pages) Seoul Semiconductor – High flux output and high luminance

Performance Characteristics
Product Data Sheet
STB0FS12A - Mid-Power LED
Table 2. Characteristics, I_F=150mA, T_j= 25ºC, RH30%
Parameter
Forward Current
Forward Voltage
Radiant Power
Dominant Wavelength
Viewing Angle ^[1]
Thermal resistance (J to S) ^[2]
ESD Sensitivity(HBM)
Symbol
I_F
V_F
-
λ_dom
2Θ_1/2
Rθ_J-S
-
Min.
-
-
-
450
-
-
Value
Typ.
Max.
150
-
3.2
-
278
-
-
460
140
-
17
-
Class 3A JESD22-A114-E
Unit
mA
V
mW
nm
Deg.
℃/W
Table 3. Absolute Maximum Ratings
Parameter
Forward Current
Power Dissipation
Junction Temperature
Operating Temperature
Storage Temperature
Symbol
I_F
P_D
T_j
T_opr
T_stg
Value
300
1.1
125
-40 ~ + 85
-40 ~ + 100
Unit
mA
W
ºC
ºC
ºC
Notes :
(1) Seoul Semiconductor maintains a tolerance of 7% on Intensity and power measurements.
(2) 2Θ_1/2 is the off-axis where the luminous intensity is 1/2 of the peak intensity.
(3) Thermal resistance is junction to T_S point (Refer to page 12).
• LED’s properties might be different from suggested values like above and below tables if operation condition
will be exceeded our parameter range. Care is to be taken that power dissipation does not exceed the
absolute maximum rating of the product.
• Thermal resistance can be increased substantially depending on the heat sink design/operating condition,
and the maximum possible driving current will decrease accordingly.
• All measurements were made under the standardized environment of Seoul Semiconductor
Rev1.3, Dec 21, 2015
3
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