STB0FS12A-AD-BA Datasheet, PDF (3/20 Pages) Seoul Semiconductor – STB0FS12A - Mid-Power LED

Performance Characteristics
Table 2. Characteristics, I_F=150mA, T_a=25ºC, RH30%
Parameter
Forward Current
Forward Voltage
Radiant Power
Dominant Wavelength
Viewing Angle ^[1]
Junction Temperature
Storage Temperature
Thermal resistance (J to S) ^[2]
ESD Sensitivity(HBM)
Symbol
I_F
V_F
-
λ_dom
2Θ_1/2
T_j
T_stg
Rθ_j-s
-
Min.
-
-
-
450
-
-
- 40
-
5k
Product Data Sheet
STB0FS12A - Mid-Power LED
Value
Typ.
150
3.2
260
-
140
-
-
17
-
Max.
-
-
-
460
-
125
+ 100
-
-
Unit
mA
V
mW
nm
Deg.
ºC
ºC
℃/W
V
Table 3. Absolute Maximum Ratings
Parameter
Forward Current
Power Dissipation
Junction Temperature
Operating Temperature
Storage Temperature
Symbol
I_F
P_D
T_j
T_opr
T_stg
Value
300
1.1
125
-30 ~ + 100
-40 ~ + 100
Unit
mA
W
ºC
ºC
ºC
Notes :
(1) 2Θ_1/2 is the off-axis where the luminous intensity is 1/2 of the peak intensity.
(2) Thermal resistance is junction to T_S point (Refer to page 12).
• Calculated performance values are for reference only.
• All measurements were made under the standardized environment of SSC.
Rev.00, March 1, 2014
3
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