SSC-FAT801 Datasheet, PDF (3/8 Pages) Seoul Semiconductor – TOP LED DEVICE

3. Absolute Maximum Ratings ^*1
Parameter
Symbol
Value
(T_A=25ºC)
Unit
Power Dissipation
P_d
85
mW
Forward Current
I_F
30
mA
Peak Forward Current
I_FM ^*2
100
mA
Reverse Voltage
V_R
5
V
Operating Temperature
T_opr
-40 ~ +100
ºC
Storage Temperature
T_stg
-40 ~ +100
ºC
*1 Care is to be taken that power dissipation does not exceed the absolute maximum rating of the product.
*2 I_FM was measured at T_W ≤ 0.1msec of pulse width and D ≤ 1/10 of duty ratio.
4. Electro-Optical Characteristics
Parameter
Forward Voltage
Reverse Current
Luminance Intensity ^*1
Peak Wavelength
Dominant Wavelength
Spectral Bandwidth 50%
Viewing Angle ^*2
Symbol Condition Min
Typ
V_F
I_F =20mA
-
2.0
I_R
V_R=5V
-
-
I_V
I_F =20mA
120
210
λ_P
I_F =20mA
-
612
λ_d
I_F =20mA
600
606
∆λ
I_F =20mA
-
14
2θ_½
I_F =20mA
-
120
(T_A=25ºC)
Max Unit
2.5
V
10
µA
-
mcd
-
nm
612
nm
-
nm
-
deg.
*1 The luminous intensity I_V was measured at the peak of the spatial pattern which may not be aligned with the mechanical axis of the LED package.
Luminous Intensity Measurement allowance is ±10%.
*2 2θ_½ is the off-axis where the luminous intensity is 1/2 of the peak intensity.
[Note] All measurements were made under the standardized environment of SSC.
SSC-QP-0401-06(REV.02)
SEOUL SEMICONDUCTOR CO., LTD.
148-29 Kasan-Dong, Keumchun-Gu, Seoul, 153-023, Korea
Phone : [phone]~6
- 3/8 -
SSC-FAT801