SAW9CF2B Datasheet, PDF (3/25 Pages) Seoul Semiconductor – Superior High Intensity for High Voltage System

Performance Characteristics
Product Data Sheet
SAW9CF2B – Acrich MJT 3030
Table 2. Characteristics, I_F=20mA, T_j= 25ºC, RH30%
Parameter
Forward Current
Forward Voltage
Luminous Intensity^[1] (2700K)^[2]
CRI ^[3]
Viewing Angle
Storage Temperature
Thermal resistance (J to S) ^[4]
ESD Sensitivity(HBM)
Symbol
I_F
V_F
I_v
R_a
2Θ_1/2
T_stg
Rθ_J-S
-
Min.
-
45
-
90
-
- 40
-
Value
Typ.
Max.
20
30
-
50
35.5
(109)
-
-
-
120
-
-
+ 100
10
-
Class 3A JESD22-A114-E
Unit
mA
V
cd
(lm)
Deg.
Deg.
ºC
℃/W
Table 3. Absolute Maximum Ratings
Parameter
Forward Current
Pulse Forward Current ^[5]
Power Dissipation
Junction Temperature
Operating Temperature
Storage Temperature
Symbol
I_F
I_FP
P_D
T_j
T_opr
T_stg
Value
30
45
1.5
125
-30 ~ + 100
-40 ~ + 100
Unit
mA
mA
W
ºC
ºC
ºC
Notes :
(1) Seoul Semiconductor maintains a tolerance of 7% on Intensity and power measurements.
(2) Correlated Color Temperature is derived from the CIE 1931 Chromaticity diagram.
Color coordinate : 0.005, CCT 5% tolerance.
(3) Tolerance is 2.0 on CRI measurements.
(4) Thermal resistance: Rth_JS (Junction to Solder)
(5) I_FP conditions with pulse width ≤10ms and duty cycle ≤10%
• Calculated performance values are for reference only.
• Thermal resistance can be increased substantially depending on the heat sink design/operating condition,
and the maximum possible driving current will decrease accordingly.
• All measurements were made under the standardized environment of Seoul Semiconductor.
Rev 1.0, Nov 29, 2016
3
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