HBT801-S Datasheet, PDF (3/25 Pages) Seoul Semiconductor – Applicable for automotive interior light

Performance Characteristics
Product Data Sheet
HBT801-S - 801 Series Blue
Table 1. Electro Optical Characteristics, I_F = 20mA, T_j = 25ºC, RH30%
Parameter
Symbol
Min.
Value
Typ.
Max.
Forward Voltage ^[1]
V_F
3.0
3.3
3.7
Reverse Voltage^[5]
V_R
(I_R=5mA)
0.9
1.2
Luminous Intensity ^{[2] [1]}
I_V
280
355
460
Luminous Flux
Φ_V
1065
Peak Wavelength
W_p
462
Dominant Wavelength ^[1]
W_d
466
469
472
Viewing Angle ^[3]
Optical Efficiency
Spectral Bandwidth 50%
2θ_1/2
η_op

120
16.13
20
Rth JA
360
Thermal resistance ^[4]
Rth JS
180
Temperature coefficient of V_F
-10℃ ≤ T ≤ 100 ℃
TC_v
-2.74
Unit
V
V
mcd
mlm
nm
nm
deg.
lm/W
nm
℃/W
℃/W
mV/℃
Temperature coefficient of W_d
-10℃ ≤ T ≤ 100 ℃
Luminous Intensity Phi V / IV
TC_wd
∂_Ω
3.0
0.04
nm/℃
3.1
lm/cd
Notes :
(1) Tolerance : VF :±0.1V, IV :±10%, W_d :±0.5nm
(2) The luminous intensity IV was measured at the peak of the spatial pattern which may not be
aligned with the mechanical axis of the LED package.
(3) Θ_1/2 is the off-axis where the luminous intensity is 1/2 of the peak intensity
(4) Thermal resistance = Rth JA : Junction/ambient , Rth JS : Junction/solder point
Pad design for improved heat dissipation : Cu-area > Cu 16mm2 per pad, FR4, t=1.6mm
(5) Not designed for reverse operation
Rev2.0, Aug 26, 2015
3
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