X42182 Datasheet, PDF (10/30 Pages) Seoul Semiconductor – Z Power LED

Characteristics for Z-Power LED
6. Green (G42182)
6-1 Electro-Optical characteristics at I_F=350mA, T_A=25ºC
Parameter
Luminous Flux ^[1]
Dominant Wavelength^[3]
Forward Voltage ^[4]
View Angle
Thermal resistance ^[5]
Thermal resistance ^[6]
Symbol
Ф_V ^[2]
λ_D
V_F
2Θ 1/2
Rθ_J-B
Rθ_J-C
Min
-
520
2.9
Value
Typ
70
525
3.25
130
9.5
8.0
Max
-
535
4
Unit
lm
nm
V
deg.
ºC /W
ºC /W
6-2 Absolute Maximum Ratings
Parameter
Symbol
Value
Forward Current
I_F
Power Dissipation
P_d
Junction Temperature
T_j
Operating Temperature
T_opr
Storage Temperature
T_stg
ESD Sensitivity ^[7]
-
1000
4
145
-40 ~ +85
-40 ~ +100
±10,000V HBM
*Notes :
[1] SSC maintains a tolerance of ±10% on flux and power measurements.
[2] Ф_V is the total luminous flux output as measured with an integrated sphere.
[3] Dominant wavelength is derived from the CIE 1931 Chromaticity diagram.
A tolerance of ±0.5nm for dominant wavelength
[4] A tolerance of ±0.06V on forward voltage measurements
[5], [6] Rθ_J-B is measured with a SSC metal core pcb.(25 ºC ≤T_J ≤ 110 ºC)
Rθ_J-C is measured with only emitter. .(25 ºC ≤T_J ≤ 110 ºC)
Break voltage of Metal PCB is 6.5kVAC
[7] It is included the zener chip to protect the product from ESD.
Unit
mA
W
ºC
ºC
ºC
-
--------------------------Caution--------------------------
1. Please do not drive at rated current more than 5 sec. without proper heat sin
Rev. 01
November. 2008
10
www.ZLED.com
Document No. : SSC-QP-7-07-24 (Rev.00)