LD90F7S-A Datasheet, PDF (1/4 Pages) Sensortechnics GmbH – Quantum Semiconductor International Co., Ltd.

LD90F7S-A/B/C
InGaAs Laser Diode
Quantum Semiconductor International Co., Ltd.
Jun.2004. Ver. 0
♦OVERVIEW
LD90F7S-A/B/C is a MOCVD grown 905nm band InGaAs laser diode with quantum well
structure. It’s an attractive light source, with a typical light output power of 10mW for Laser,
industrial optical module and sensor application
♦APPLICATION
- Sensor
♦FEATURES
- Visible Light Output : λp = 905 nm
- Optical Power Output : 10mW CW
- Package Type
: TO-18 (5.6mmφ)
- Built-in Photo Diode for Monitoring Laser Diode
♦ELECTRICAL CONNECTION
Bottom View
Pin Configuration
A
LD cathode, PD anode (Fig. 1)
B
LD , PD anode (Fig. 2)
C
LD anode, PD cathode (Fig. 3)
Fig. 1
LD90F7SA
Fig. 2
LD90F7SB
Fig. 3
LD90F7SC