LD85H6S-A Datasheet, PDF (1/6 Pages) Sensortechnics GmbH – Quantum Semiconductor International Co., Ltd.

LD85H6S-A/B/C
AlGaAs Laser Diode
Quantum Semiconductor International Co., Ltd.
Ver.3 APR.2005
♦OVERVIEW
LD85H6SA is a MOCVD grown 850nm band AlGaAs laser diode with quantum well structure.
It's an attractive light source, with a typical light output power of 20mW for industrial optical module
and sensor applications.
♦APPLICATION
- Sensor
- Industrial Optical Module
♦FEATURES
- Visible Light Output : λp = 850 nm
- Optical Power Output : 20mW CW
- Package Type
: TO-18 (5.6mmφ)
- Built-in Photo Diode for Monitoring Laser Diode
♦ELECTRICAL CONNECTION
Bottom View
Pin Configuration
A
LD cathode, PD anode (Fig. 1)
B
LD , PD anode (Fig. 2)
C
LD anode, PD cathode (Fig. 3)
Fig. 1
LD85H6SA
Fig. 2
LD85H6SB
Fig. 3
LD85H6SC