LD83O6S-A Datasheet, PDF (1/4 Pages) Sensortechnics GmbH – Optical Sensor

LD83O6S-A/B/C
AlGaAs Laser Diode
Quantum Semiconductor International Co., Ltd.
Ver.1 May. 2010
♦OVERVIEW
LD83O6S-A/B/C is a MOCVD grown 830nm band AlGaAs laser diode with quantum well structure.
It's an attractive light source, with a typical light output power of 100mW for industrial optical module
and sensor applications.
♦APPLICATION
- Optical Sensor
- Industrial Optical Module
♦FEATURES
- Visible Light Output : λp = 830 nm
- Optical Power Output : 100mW CW
- Package Type
: TO-18 (5.6mmφ)
- Built-in Photo Diode for Monitoring Laser Diode
♦ELECTRICAL CONNECTION
Bottom View
Pin Configuration
A
LD cathode, PD anode (Fig. 1)
B
LD , PD anode (Fig. 2)
C
LD anode, PD cathode (Fig. 3)
Fig. 1
LD83O6SA
Fig. 2
LD83O6SB
Fig. 3
LD83O6SC